Analysis of Data Obtained Using the Thermal-Step Method on a MOS Structure-An Electrostatic Approach

The thermal-step method (TSM) is a nondestructive technique for measuring electric charge, based on the acquisition of a capacitive current appearing when a thermal step of low amplitude is applied to an insulating structure. The electrostatic modeling of a metal-oxide-semiconductor (MOS) structure...

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Published inIEEE transactions on industry applications Vol. 46; no. 3; pp. 1144 - 1150
Main Authors Boyer, Ludovic, Fruchier, Olivier, Notingher, Petru, Agnel, Serge, Toureille, Alain, Rousset, Bernard, Sanchez, Jean-Louis
Format Journal Article
LanguageEnglish
Published New York IEEE 01.05.2010
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Institute of Electrical and Electronics Engineers
Subjects
Acquisitions
Amplitudes
Capacitance
Charge measurement
Current measurement
Data analysis
Dielectrics and electrical insulation
Electric charge
Electronics
Electrostatic analysis
Electrostatic measurements
Electrostatics
Engineering Sciences
Marketing
Mathematical models
Metal oxide semiconductors
metal-oxide-semiconductor (MOS)
oxide
Oxides
Pressure measurement
Pulse measurements
reliability
space charge
Substrates
thermal-step method (TSM)
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Abstract The thermal-step method (TSM) is a nondestructive technique for measuring electric charge, based on the acquisition of a capacitive current appearing when a thermal step of low amplitude is applied to an insulating structure. The electrostatic modeling of a metal-oxide-semiconductor (MOS) structure while crossed by a thermal wave is addressed in this paper, in view of analyzing the data obtained by TSM in conjunction with capacitance-voltage measurements. Applications to MOS samples with 120-nm-thick oxides are presented.
AbstractList The thermal-step method (TSM) is a nondestructive technique for measuring electric charge, based on the acquisition of a capacitive current appearing when a thermal step of low amplitude is applied to an insulating structure. The electrostatic modeling of a metal-oxide-semiconductor (MOS) structure while crossed by a thermal wave is addressed in this paper, in view of analyzing the data obtained by TSM in conjunction with capacitance-voltage measurements. Applications to MOS samples with 120-nm-thick oxides are presented.
Author Toureille, Alain
Sanchez, Jean-Louis
Agnel, Serge
Notingher, Petru
Rousset, Bernard
Fruchier, Olivier
Boyer, Ludovic
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Cites_doi 10.1063/1.3005425
10.1109/14.2384
10.1103/PhysRevLett.40.413
10.1088/0022-3727/35/24/316
10.1109/TDEI.2005.1522190
10.1109/16.30938
10.1109/14.108144
10.1063/1.2186025
10.1103/PhysRevLett.48.563
10.1109/94.971455
10.1063/1.1143354
10.1109/94.625650
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  article-title: on the use of the thermal step method as a tool for characterizing thin layers and structures for micro and nano-electronics
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SubjectTerms Acquisitions
Amplitudes
Capacitance
Charge measurement
Current measurement
Data analysis
Dielectrics and electrical insulation
Electric charge
Electronics
Electrostatic analysis
Electrostatic measurements
Electrostatics
Engineering Sciences
Marketing
Mathematical models
Metal oxide semiconductors
metal-oxide-semiconductor (MOS)
oxide
Oxides
Pressure measurement
Pulse measurements
reliability
space charge
Substrates
thermal-step method (TSM)
Title Analysis of Data Obtained Using the Thermal-Step Method on a MOS Structure-An Electrostatic Approach
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