Investigation of current transport parameters of Ti/4H-SiC MPS diode with inhomogeneous barrier
The current transport parameters of 4H-SiC merged PiN Schottky （MPS） diode are investigated in a temperature range of 300-520 K. Evaluation of the experimental current-voltage （I-V） data reveals the decrease in Schottky barrier height Φb but an increase in ideality factor n, with temperature decreas...
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| Published in | Chinese physics B Vol. 20; no. 5; pp. 353 - 358 |
|---|---|
| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
IOP Publishing
01.05.2011
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 |
| DOI | 10.1088/1674-1056/20/5/057301 |
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| Abstract | The current transport parameters of 4H-SiC merged PiN Schottky （MPS） diode are investigated in a temperature range of 300-520 K. Evaluation of the experimental current-voltage （I-V） data reveals the decrease in Schottky barrier height Φb but an increase in ideality factor n, with temperature decreasing, which suggests the presence of an inhomogeneous Schottky barrier. The current transport behaviours are analysed in detail using the Tung＇s model and the effective area of the low barrier patches is extracted. It is found that small low barrier patches, making only 4.3% of the total contact, may significantly influence the device electrical characteristics due to the fact that a barrier height of 0.968 eV is much lower than the average barrier height 1.39 eV. This shows that ion implantation in the Schottky contact region of MPS structure may result in a poor Ti/4H-SiC interface quality. In addition, the temperature dependence of the specific on-resistance （Ron-sp）, T^2.14, is determined between 300 K and 520 K, which is similar to that predicted by a reduction in electron mobility. |
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| AbstractList | The current transport parameters of 4H-SiC merged PiN Schottky （MPS） diode are investigated in a temperature range of 300-520 K. Evaluation of the experimental current-voltage （I-V） data reveals the decrease in Schottky barrier height Φb but an increase in ideality factor n, with temperature decreasing, which suggests the presence of an inhomogeneous Schottky barrier. The current transport behaviours are analysed in detail using the Tung＇s model and the effective area of the low barrier patches is extracted. It is found that small low barrier patches, making only 4.3% of the total contact, may significantly influence the device electrical characteristics due to the fact that a barrier height of 0.968 eV is much lower than the average barrier height 1.39 eV. This shows that ion implantation in the Schottky contact region of MPS structure may result in a poor Ti/4H-SiC interface quality. In addition, the temperature dependence of the specific on-resistance （Ron-sp）, T^2.14, is determined between 300 K and 520 K, which is similar to that predicted by a reduction in electron mobility. |
| Author | 宋庆文 张玉明 张义门 陈丰平 汤晓燕 |
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| CitedBy_id | crossref_primary_10_1016_j_jallcom_2024_178240 crossref_primary_10_1088_1674_1056_acc2ae crossref_primary_10_1063_1_4938070 crossref_primary_10_1109_TED_2021_3129705 crossref_primary_10_1007_s11664_019_07802_6 crossref_primary_10_1016_j_jcrysgro_2019_125353 crossref_primary_10_7498_aps_70_20210675 crossref_primary_10_1088_1674_1056_23_12_127302 |
| Cites_doi | 10.1116/1.589442 10.1016/0921-5107(95)01276-1 10.1088/1674-1056/18/12/057 10.1088/1674-1056/19/4/047201 10.1063/1.1573750 10.1109/16.930664 10.1103/PhysRevB.45.13509 10.1109/TED.2008.926636 10.1016/j.tsf.2008.05.015 10.1109/TED.2008.926643 10.1063/1.2745436 10.1002/1521-3951(199707)202:1<549::AID-PSSB549>3.0.CO;2-6 10.1109/TED.2008.926638 10.1007/s11664-000-0081-9 10.4028/www.scientific.net/MSF.338-342.1179 10.1109/TED.2005.862704 10.1063/1.2936963 |
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| DocumentTitleAlternate | Investigation of current transport parameters of Ti/4H-SiC MPS diode with inhomogeneous barrier |
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| Notes | Song Qing-Wen,Zhang Yu-Min,Zhang Yi-Men,Chen Feng-Ping,Tang Xiao-Yan School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Ministry of Education, Xidian University, Xi＇an 710071, China The current transport parameters of 4H-SiC merged PiN Schottky （MPS） diode are investigated in a temperature range of 300-520 K. Evaluation of the experimental current-voltage （I-V） data reveals the decrease in Schottky barrier height Φb but an increase in ideality factor n, with temperature decreasing, which suggests the presence of an inhomogeneous Schottky barrier. The current transport behaviours are analysed in detail using the Tung＇s model and the effective area of the low barrier patches is extracted. It is found that small low barrier patches, making only 4.3% of the total contact, may significantly influence the device electrical characteristics due to the fact that a barrier height of 0.968 eV is much lower than the average barrier height 1.39 eV. This shows that ion implantation in the Schottky contact region of MPS structure may result in a poor Ti/4H-SiC interface quality. In addition, the temperature dependence of the specific on-resistance （Ron-sp）, T^2.14, is determined between 300 K and 520 K, which is similar to that predicted by a reduction in electron mobility. 11-5639/O4 4H-SiC, MPS, barrier inhomogeneity, specific on-resistance |
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| References | 11 12 13 14 15 16 Chow T P (8) 2000 17 18 19 Song Q W (4) 2009; 18 Song Q W (2) 2010; 19 3 5 6 Poggi A (1) 2010; 107 7 9 10 |
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| Snippet | The current transport parameters of 4H-SiC merged PiN Schottky （MPS） diode are investigated in a temperature range of 300-520 K. Evaluation of the experimental... |
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| StartPage | 353 |
| SubjectTerms | MPS结构 PIN二极管 不均匀 传输参数 屏障 温度范围 电流 肖特基势垒 |
| Title | Investigation of current transport parameters of Ti/4H-SiC MPS diode with inhomogeneous barrier |
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