汤晓燕, 宋. 张. 张. 陈. (2011). Investigation of current transport parameters of Ti/4H-SiC MPS diode with inhomogeneous barrier. Chinese physics B, 20(5), 353-358. https://doi.org/10.1088/1674-1056/20/5/057301
Chicago Style (17th ed.) Citation汤晓燕, 宋庆文 张玉明 张义门 陈丰平. "Investigation of Current Transport Parameters of Ti/4H-SiC MPS Diode with Inhomogeneous Barrier." Chinese Physics B 20, no. 5 (2011): 353-358. https://doi.org/10.1088/1674-1056/20/5/057301.
MLA (9th ed.) Citation汤晓燕, 宋庆文 张玉明 张义门 陈丰平. "Investigation of Current Transport Parameters of Ti/4H-SiC MPS Diode with Inhomogeneous Barrier." Chinese Physics B, vol. 20, no. 5, 2011, pp. 353-358, https://doi.org/10.1088/1674-1056/20/5/057301.
Warning: These citations may not always be 100% accurate.