The Oppositely Doped Islands IGBT Achieving Ultralow Turn Off Loss - Chen, Weizhen; Cheng, Junji; Huang, Haimeng; Zhang, Bingke; Chen, Xing Bi (IEEE transactions on electron devices, 2019)
Keywords: Anodes; Breakdown; Data buses; Doping; Electric fields; Electric potential; Fabrication; Field stop (FS); Immunity; insulated gate bipolar transistor (IGBT); Insulated gate bipolar transistors; Islands; Logic gates; oppositely doped island; Semiconductor devices; Space charge; Transient analysis; TSUPREM4; turn off loss; Voltage