APA (7th ed.) Citation

Chen, W., Cheng, J., Huang, H., Zhang, B., & Chen, X. B. (2019). The Oppositely Doped Islands IGBT Achieving Ultralow Turn Off Loss. IEEE transactions on electron devices, 66(8), 3690-3693. https://doi.org/10.1109/TED.2019.2924093

Chicago Style (17th ed.) Citation

Chen, Weizhen, Junji Cheng, Haimeng Huang, Bingke Zhang, and Xing Bi Chen. "The Oppositely Doped Islands IGBT Achieving Ultralow Turn Off Loss." IEEE Transactions on Electron Devices 66, no. 8 (2019): 3690-3693. https://doi.org/10.1109/TED.2019.2924093.

MLA (9th ed.) Citation

Chen, Weizhen, et al. "The Oppositely Doped Islands IGBT Achieving Ultralow Turn Off Loss." IEEE Transactions on Electron Devices, vol. 66, no. 8, 2019, pp. 3690-3693, https://doi.org/10.1109/TED.2019.2924093.