Stateful Reconfigurable Logic via a Single-Voltage-Gated Spin Hall-Effect Driven Magnetic Tunnel Junction in a Spintronic Memory - He Zhang; Wang Kang; Lezhi Wang; Wang, Kang L.; Weisheng Zhao (IEEE transactions on electron devices, 2017)
Keywords: CMOS; Critical current density (superconductivity); Data storage; Feasibility; In-memory logic (IML); Logic; Logic functions; Magnetic effects; Magnetic switching; magnetic tunnel junction (MTJ); Magnetic tunneling; Magnetization; Product development; R&D; Research & development; Resistance; spin Hall effect (SHE); Spintronics; Switches; voltage-controlled magnetic anisotropy (VCMA)