Predicting Muon-Induced SEU Rates for a 28-nm SRAM Using Protons and Heavy Ions to Calibrate the Sensitive Volume Model

• Published in: IEEE transactions on nuclear science Vol. 65; no. 2; pp. 712 - 718
• Main Authors: Trippe, J. M., Reed, R. A., Austin, R. A., Sierawski, B. D., Massengill, L. W., Weller, R. A., Warren, K. M., Schrimpf, R. D., Narasimham, B., Bartz, B., Reed, D.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.02.2018; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: CMOS; Computer simulation; Cytology; Data models; Direct ionization; Energy transfer; Heavy ions; Ions; Linear energy transfer (LET); Mathematical models; Mesons; Modelling; Monte Carlo; muons; Neutrons; Parameter sensitivity; Predictions; Predictive models; Protons; Random access memory; rate prediction; Sea level; single event upset (SEU); Single event upsets; Static random access memory; static random access memory (SRAM)

Muon-induced single-event upset cross sections are estimated for a 28-nm static random access memory (SRAM) using Monte Carlo simulations informed by ion test results. As an exercise in modeling with limited information, details of the 28-nm SRAM's cell structure were not used (and not availabl...