Predicting Muon-Induced SEU Rates for a 28-nm SRAM Using Protons and Heavy Ions to Calibrate the Sensitive Volume Model
Muon-induced single-event upset cross sections are estimated for a 28-nm static random access memory (SRAM) using Monte Carlo simulations informed by ion test results. As an exercise in modeling with limited information, details of the 28-nm SRAM's cell structure were not used (and not availabl...
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Published in | IEEE transactions on nuclear science Vol. 65; no. 2; pp. 712 - 718 |
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Main Authors | , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
01.02.2018
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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