Circumventing the ammonia-related growth suppression for obtaining regular GaN nanowires by HVPE

• Published in: Nanotechnology Vol. 35; no. 26; pp. 265604 - 265613
• Main Authors: Semlali, Elias, Avit, Geoffrey, André, Yamina, Gil, Evelyne, Moskalenko, Andriy, Shields, Philip, Dubrovskii, Vladimir G, Cattoni, Andrea, Harmand, Jean-Christophe, Trassoudaine, Agnès
• Format: Journal Article
• Language: English
• Published: England IOP Publishing 12.04.2024; Institute of Physics
• Subjects: Engineering Sciences; GaN nanowires; hydride vapor phase epitaxy; Physics; selective area growth; GaN nanowires; selective area growth; hydride vapor phase epitaxy
• ISSN: 0957-4484; 1361-6528
• DOI: 10.1088/1361-6528/ad3741

Selective area growth by hydride vapor phase epitaxy of GaN nanostructures with different shapes was investigated versus the deposition conditions including temperature and ammonia flux. Growth experiments were carried out on templates of GaN on sapphire masked with SiN . We discuss two occurrences related to axial and radial growth of GaN nanowires. A growth suppression phenomenon was observed under certain conditions, which was circumvented by applying the cyclic growth mode. A theoretical model involving inhibiting species was developed to understand the growth suppression phenomenon on the masked substrates. Various morphologies of GaN nanocrystals were obtained by controlling the competition between the growth and blocking mechanisms as a function of the temperature and vapor phase composition. The optimal growth conditions were revealed for obtaining regular arrays of ∼5 m long GaN nanowires.