Roles of excess minority carrier recombination and chemisorbed O2 species at SiO2/Si interfaces in Si dry oxidation: Comparison between p-Si(001) and n-Si(001) surfaces

• Published in: The Journal of chemical physics Vol. 157; no. 23; pp. 234705 - 234725
• Main Authors: Tsuda, Yasutaka, Yoshigoe, Akitaka, Ogawa, Shuichi, Sakamoto, Tetsuya, Yamamoto, Yoshiki, Yamamoto, Yukio, Takakuwa, Yuji
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 21.12.2022
• Subjects: Adsorption; Carrier recombination; Electron states; Minority carriers; Oxidation; Photoexcitation; Photovoltaic effect; Point defects; Silicon dioxide; Surface chemistry

This study provides experimental evidence for the following: (1) Excess minority carrier recombination at SiO2/Si interfaces is associated with O2 dissociative adsorption; (2) the x-ray induced enhancement of SiO2 growth is not caused by the band flattening resulting from the surface photovoltaic ef...