APA (7th ed.) Citation

Tsuda, Y., Yoshigoe, A., Ogawa, S., Sakamoto, T., Yamamoto, Y., Yamamoto, Y., & Takakuwa, Y. (2022). Roles of excess minority carrier recombination and chemisorbed O2 species at SiO2/Si interfaces in Si dry oxidation: Comparison between p-Si(001) and n-Si(001) surfaces. The Journal of chemical physics, 157(23), 234705-234725. https://doi.org/10.1063/5.0109558

Chicago Style (17th ed.) Citation

Tsuda, Yasutaka, Akitaka Yoshigoe, Shuichi Ogawa, Tetsuya Sakamoto, Yoshiki Yamamoto, Yukio Yamamoto, and Yuji Takakuwa. "Roles of Excess Minority Carrier Recombination and Chemisorbed O2 Species at SiO2/Si Interfaces in Si Dry Oxidation: Comparison Between P-Si(001) and N-Si(001) Surfaces." The Journal of Chemical Physics 157, no. 23 (2022): 234705-234725. https://doi.org/10.1063/5.0109558.

MLA (9th ed.) Citation

Tsuda, Yasutaka, et al. "Roles of Excess Minority Carrier Recombination and Chemisorbed O2 Species at SiO2/Si Interfaces in Si Dry Oxidation: Comparison Between P-Si(001) and N-Si(001) Surfaces." The Journal of Chemical Physics, vol. 157, no. 23, 2022, pp. 234705-234725, https://doi.org/10.1063/5.0109558.