Photolithography system using modified illumination

Since the LSI pattern size has approached the exposure wavelength, various methods have been developed to overcome limitations in photolithography. This fact indicates that a shorter wavelength or some novel techniques will be needed in order to cope with finer patterns. The modified illumination me...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 32; no. 1A; pp. 239 - 243
Main Authors KAMON, K, MIYAMOTO, T, MYOI, Y, NAGATA, H, TANAKA, M
Format Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 1993
Subjects
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Step method
Illumination
LSI circuit
Microelectronic fabrication
Photolithography
Depth
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Summary:Since the LSI pattern size has approached the exposure wavelength, various methods have been developed to overcome limitations in photolithography. This fact indicates that a shorter wavelength or some novel techniques will be needed in order to cope with finer patterns. The modified illumination method was proposed in order to improve the depth of focus and resolution limit. We applied the modified illumination method to the step-and-repeat exposure system. Experiments using modified illumination were carried out and sub-half-micron patterns were produced. The process latitudes of the modified illumination method are evaluated.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.32.239