Thermoelectric Characteristics of Heavily Doped p-Type Lead Telluride at Different Heavy-Hole Band Depths
The full set of thermoelectric parameters of heavily doped p -PbTe in the temperature range of 300–1200 K at an acceptor doping level of N a = 1 × 10 19 –4 × 10 20 cm –3 and a heavy-hole band depth ranging from 0.36 to 0.7 eV is calculated. The figure-of-merit value Z is found to be highly sensitive...
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Published in | Semiconductors (Woodbury, N.Y.) Vol. 53; no. 4; pp. 419 - 427 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
Moscow
Pleiades Publishing
01.04.2019
Springer Springer Nature B.V |
Subjects | |
Online Access | Get full text |
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