Very high quantum efficiency in InAs/GaSb superlattice for very long wavelength detection with cutoff of 21 μm

• Published in: Applied physics letters Vol. 108; no. 12
• Main Authors: Jiang, Dongwei, Xiang, Wei, Guo, Fengyun, Hao, Hongyue, Han, Xi, Li, Xiaochao, Wang, Guowei, Xu, Yingqiang, Yu, Qingjiang, Niu, Zhichuan
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 21.03.2016
• Subjects: ABUNDANCE; Antireflection coatings; Applied physics; BERYLLIUM; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Cut off wavelength; Dependence; DETECTION; Doping; Efficiency; GALLIUM ANTIMONIDES; INDIUM ARSENIDES; Infrared detectors; PEAKS; Photovoltaic cells; QUANTUM EFFICIENCY; REFLECTION; SUPERLATTICES; WAVELENGTHS

The authors report the dependence of the quantum efficiency on beryllium concentration in the active region of type-II InAs/GaSb superlattice infrared detector with a cutoff wavelength around 21 μm. It is found that the quantum efficiency and responsivity show a clear delineation in comparison to th...