Thickness and tensile stress determination of black silicon layers by spectral reflectance and Raman scattering

• Published in: Journal of Electrical Engineering Vol. 70; no. 7; pp. 51 - 57
• Main Authors: Králik, Martin, Jurečka, Stanislav, Pinčík, Emil
• Format: Journal Article
• Language: English
• Published: Bratislava Sciendo 01.12.2019; De Gruyter Poland
• Subjects: anodic etching; Axial stress; black silicon; Crystal lattices; Effective medium theory; electrochemical etching; Etching; Hydrofluoric acid; Mathematical models; Optical properties; Parameters; porous silicon; Raman scattering; Raman spectra; Reflectance; SCOUT; Silicon substrates; Spectral reflectance; Spectrometers; Tensile stress; Thickness

In this work black silicon (b-Si) samples were prepared by anodic (electrochemical) etching of p-type silicon substrate in solution of hydrofluoric acid (HF). We studied influence of anodic etching conditions (etching time, electrical potential and current) on the spectral reflectance and Raman scat...