MBE-grown InSb photodetector arrays

The MBE method has been applied to grow InSb layers on InSb substrates. These layers have served as a basis for fabricating mid-wave IR photodetector arrays. The characteristics of photodetector arrays on epitaxial InSb layers have been compared with those of series-produced single-crystal InSb arra...

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Published inTechnical physics Vol. 62; no. 6; pp. 915 - 919
Main Authors Bakarov, A. K., Gutakovskii, A. K., Zhuravlev, K. S., Kovchavtsev, A. P., Toropov, A. I., Burlakov, I. D., Boltar’, K. O., Vlasov, P. V., Lopukhin, A. A.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.06.2017
Springer
Springer Nature B.V
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Abstract The MBE method has been applied to grow InSb layers on InSb substrates. These layers have served as a basis for fabricating mid-wave IR photodetector arrays. The characteristics of photodetector arrays on epitaxial InSb layers have been compared with those of series-produced single-crystal InSb arrays.
AbstractList The MBE method has been applied to grow InSb layers on InSb substrates. These layers have served as a basis for fabricating mid-wave IR photodetector arrays. The characteristics of photodetector arrays on epitaxial InSb layers have been compared with those of series-produced single-crystal InSb arrays.
Audience Academic
Author Zhuravlev, K. S.
Burlakov, I. D.
Bakarov, A. K.
Lopukhin, A. A.
Gutakovskii, A. K.
Vlasov, P. V.
Kovchavtsev, A. P.
Toropov, A. I.
Boltar’, K. O.
Author_xml – sequence: 1
  givenname: A. K.
  surname: Bakarov
  fullname: Bakarov, A. K.
  email: bakarov@isp.nsc.ru
  organization: Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk State University
– sequence: 2
  givenname: A. K.
  surname: Gutakovskii
  fullname: Gutakovskii, A. K.
  organization: Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
– sequence: 3
  givenname: K. S.
  surname: Zhuravlev
  fullname: Zhuravlev, K. S.
  organization: Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk State University
– sequence: 4
  givenname: A. P.
  surname: Kovchavtsev
  fullname: Kovchavtsev, A. P.
  organization: Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
– sequence: 5
  givenname: A. I.
  surname: Toropov
  fullname: Toropov, A. I.
  organization: Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
– sequence: 6
  givenname: I. D.
  surname: Burlakov
  fullname: Burlakov, I. D.
  organization: AO NPO Orion
– sequence: 7
  givenname: K. O.
  surname: Boltar’
  fullname: Boltar’, K. O.
  organization: AO NPO Orion
– sequence: 8
  givenname: P. V.
  surname: Vlasov
  fullname: Vlasov, P. V.
  organization: AO NPO Orion
– sequence: 9
  givenname: A. A.
  surname: Lopukhin
  fullname: Lopukhin, A. A.
  organization: AO NPO Orion
BookMark eNp1kEtPAjEQxxuDiYB-AG8knBdnto_tHpEgkmA8oOdN6QOXwBbbJYZvb8l6MDFmDjOZmd88_gPSa3xjCblHmCBS9rBGELSQLMcCBABjV6SPUEImeM57l1jQ7FK_IYMYdwCIkos-Gb88zrNt8F_NaNmsN6Pjh2-9sa3VrQ8jFYI6x1ty7dQ-2rsfPyTvT_O32XO2el0sZ9NVpinnbSao4RKZZLJ0peXISk2lNMZS42DjVElzhRoMRcGU0txRJy0URjObIxpKh2TczT0G_3mysa12_hSatLLCEvNSCpZ-HZJJ17VVe1vVjfNtUDqZsYdaJ1VcnfJTDgAFgoQEYAfo4GMM1lXHUB9UOFcI1UW86o94ick7JqbeZmvDr1P-hb4BTddvmA
CitedBy_id crossref_primary_10_1134_S106422692303004X
crossref_primary_10_1134_S1064226922090030
crossref_primary_10_1134_S1063776122050065
crossref_primary_10_1088_2053_1591_abbded
crossref_primary_10_1134_S1063785020020285
crossref_primary_10_1134_S106422692314019X
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crossref_primary_10_1134_S1064226922090108
Cites_doi 10.1134/S1063782611110145
10.1103/PhysRevB.50.14965
10.1007/s11664-008-0558-5
10.1016/j.infrared.2013.11.010
10.1016/j.pquantelec.2012.07.001
10.1117/1.JRS.8.084998
10.1063/1.112384
ContentType Journal Article
Copyright Pleiades Publishing, Ltd. 2017
COPYRIGHT 2017 Springer
Copyright Springer Science & Business Media 2017
Copyright_xml – notice: Pleiades Publishing, Ltd. 2017
– notice: COPYRIGHT 2017 Springer
– notice: Copyright Springer Science & Business Media 2017
DBID AAYXX
CITATION
DOI 10.1134/S1063784217060044
DatabaseName CrossRef
DatabaseTitle CrossRef
DatabaseTitleList


DeliveryMethod fulltext_linktorsrc
Discipline Physics
EISSN 1090-6525
EndPage 919
ExternalDocumentID A500071080
10_1134_S1063784217060044
GroupedDBID -5F
-5G
-BR
-EM
-Y2
-~C
-~X
.VR
06D
0R~
0VY
123
1N0
29Q
29~
2J2
2JN
2JY
2KG
2KM
2LR
2VQ
2~H
30V
4.4
408
40D
40E
5VS
6NX
8TC
8UJ
95-
95.
95~
96X
AAAVM
AABHQ
AAFGU
AAHNG
AAIAL
AAJKR
AANZL
AAPBV
AARHV
AARTL
AATNV
AATVU
AAUYE
AAWCG
AAYFA
AAYIU
AAYQN
AAYTO
ABBBX
ABDBF
ABDZT
ABECU
ABFGW
ABFTD
ABFTV
ABHLI
ABHQN
ABJNI
ABJOX
ABKAS
ABKCH
ABKTR
ABMNI
ABMQK
ABNWP
ABPTK
ABQBU
ABSXP
ABTEG
ABTHY
ABTKH
ABTMW
ABULA
ABWNU
ABXPI
ACBMV
ACBRV
ACBXY
ACBYP
ACGFS
ACHSB
ACHXU
ACIGE
ACIPQ
ACKNC
ACMDZ
ACMLO
ACNCT
ACOKC
ACOMO
ACTTH
ACVWB
ACWMK
ADHHG
ADHIR
ADINQ
ADKNI
ADKPE
ADMDM
ADOXG
ADRFC
ADTPH
ADURQ
ADYFF
ADZKW
AEBTG
AEFTE
AEGAL
AEGNC
AEJHL
AEJRE
AEKMD
AENEX
AEOHA
AEPYU
AESTI
AETLH
AEVLU
AEVTX
AEXYK
AFGCZ
AFLOW
AFNRJ
AFQWF
AFWTZ
AFZKB
AGAYW
AGDGC
AGGBP
AGJBK
AGMZJ
AGQMX
AGWIL
AGWZB
AGYKE
AHAVH
AHBYD
AHSBF
AHYZX
AIAKS
AIIXL
AILAN
AIMYW
AITGF
AJBLW
AJDOV
AJRNO
AKQUC
ALMA_UNASSIGNED_HOLDINGS
ALWAN
AMKLP
AMXSW
AMYLF
AMYQR
AOCGG
ARMRJ
ASPBG
AVWKF
AXYYD
AZFZN
B-.
B0M
BA0
BDATZ
BGNMA
CAG
COF
CS3
CSCUP
DDRTE
DNIVK
DPUIP
DU5
EAD
EAP
EAS
EBLON
EBS
EIOEI
EJD
EMK
EPL
ESBYG
EST
ESX
FEDTE
FERAY
FFXSO
FIGPU
FINBP
FNLPD
FRRFC
FSGXE
FWDCC
GGCAI
GGRSB
GJIRD
GNWQR
GQ6
GQ7
HF~
HG6
HMJXF
HRMNR
HVGLF
HZ~
I-F
IAO
IGS
IJ-
IKXTQ
IWAJR
IXD
I~X
I~Z
J-C
JBSCW
JZLTJ
KOV
LLZTM
M4Y
MA-
N2Q
NB0
NPVJJ
NQJWS
NU0
O9-
O93
O9J
P9T
PF0
PT4
QOS
R89
R9I
RIG
RNS
ROL
RSV
S16
S1Z
S27
S3B
SAP
SDH
SHX
SISQX
SJYHP
SNE
SNPRN
SNX
SOHCF
SOJ
SPH
SPISZ
SRMVM
SSLCW
STPWE
SZN
T13
TSG
TUC
TUS
UG4
UNUBA
UOJIU
UTJUX
UZXMN
VC2
VCL
VFIZW
VOH
W23
W48
WK8
XU3
YLTOR
Z7R
Z7S
Z7U
Z7X
Z7Y
ZMTXR
~8M
~A9
AACDK
AAJBT
AASML
AAYXX
ABAKF
ACAOD
ACDTI
ACZOJ
AEFQL
AEMSY
AFBBN
AGRTI
AIGIU
CITATION
H13
VIT
ID FETCH-LOGICAL-c355t-63d58148489f9e5149c388dde3df0bfa932a1c0d3164aac5f3f8e07dc4e211d33
IEDL.DBID AGYKE
ISSN 1063-7842
IngestDate Fri Sep 13 08:55:23 EDT 2024
Fri Feb 02 04:15:20 EST 2024
Thu Sep 12 18:13:27 EDT 2024
Sat Dec 16 12:00:00 EST 2023
IsPeerReviewed true
IsScholarly true
Issue 6
Language English
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-c355t-63d58148489f9e5149c388dde3df0bfa932a1c0d3164aac5f3f8e07dc4e211d33
PQID 1912986411
PQPubID 2043675
PageCount 5
ParticipantIDs proquest_journals_1912986411
gale_infotracacademiconefile_A500071080
crossref_primary_10_1134_S1063784217060044
springer_journals_10_1134_S1063784217060044
PublicationCentury 2000
PublicationDate 2017-06-01
PublicationDateYYYYMMDD 2017-06-01
PublicationDate_xml – month: 06
  year: 2017
  text: 2017-06-01
  day: 01
PublicationDecade 2010
PublicationPlace Moscow
PublicationPlace_xml – name: Moscow
– name: New York
PublicationTitle Technical physics
PublicationTitleAbbrev Tech. Phys
PublicationYear 2017
Publisher Pleiades Publishing
Springer
Springer Nature B.V
Publisher_xml – name: Pleiades Publishing
– name: Springer
– name: Springer Nature B.V
References SunW.FanH.PengZ.ZhangL.ZhangX.ZhangL.LuZ.SiJ.EmelyanovE.PutyatoM.SemyaginB.PchelyakovO.PreobrazhenskiiV.Infrared Phys. Technol.2014621432014InPhT..62..143S10.1016/j.infrared.2013.11.010
Boltar’K. O.VlasovP. V.LopukhinA. A.PonomarenkoV. P.RantsanS. K.FadeevV. V.Prikl. Fiz., No.2013667
http://www.lockheedmartin.com/us/mfc/siteinformation/ santabarbara.html.
KomkovO. S.SemenovA. N.FirsovD. D.Ya.MeltserB.Solov’evV. A.PopovaT. V.PikhtinA. N.IvanovS. V.Semiconductors20114514252011Semic..45.1425K10.1134/S1063782611110145
MichelE.SinghG.SlivkenS.BesikciC.BoveP.FergusonI.RazeghiM.Appl. Phys. Lett.19946533381994ApPhL..65.3338M10.1063/1.112384
http://www.scd.co.il.
Lien TranT.HatamiF.Ted MasselinkW.KunetsV. P.SalamoG. J.J. Electron. Mater.20083717992008JEMat..37.1799T10.1007/s11664-008-0558-5
Boltar’K. O.VlasovP. V.LopukhinA. A.PoluneevV. V.RyabovaA. A.Usp. Prikl. Fiz., No.20136733
McConvilleC.JonesT.LeibsleF.DriverS.NoakesT.SchweitzerM.RichardsonN.Phys. Rev. B199450149651994PhRvB..5014965M10.1103/PhysRevB.50.14965
TingD. Z.SoibelA.KeoS. A.RafolS. B.MumoloJ. M.LiuJ. K.HillC. J.KhoshakhlaghA.HöglundL.LuongE. M.GunapalaS. D.J. Appl. Remote Sens.201480849982014JARS....8.4998T10.1117/1.JRS.8.084998
RogalskiA.Prog. Quantum Electron.2012363422012PQE....36..342R10.1016/j.pquantelec.2012.07.001
1525_CR3
W. Sun (1525_CR4) 2014; 62
K. O. Boltar (1525_CR10) 2013; 6
O. S. Komkov (1525_CR5) 2011; 45
A. Rogalski (1525_CR1) 2012; 36
1525_CR2
C. McConville (1525_CR9) 1994; 50
K. O. Boltar (1525_CR11) 2013; 6
T. Lien Tran (1525_CR6) 2008; 37
E. Michel (1525_CR7) 1994; 65
D. Z. Ting (1525_CR8) 2014; 8
References_xml – ident: 1525_CR3
– ident: 1525_CR2
– volume: 45
  start-page: 1425
  year: 2011
  ident: 1525_CR5
  publication-title: Semiconductors
  doi: 10.1134/S1063782611110145
  contributor:
    fullname: O. S. Komkov
– volume: 50
  start-page: 14965
  year: 1994
  ident: 1525_CR9
  publication-title: Phys. Rev. B
  doi: 10.1103/PhysRevB.50.14965
  contributor:
    fullname: C. McConville
– volume: 37
  start-page: 1799
  year: 2008
  ident: 1525_CR6
  publication-title: J. Electron. Mater.
  doi: 10.1007/s11664-008-0558-5
  contributor:
    fullname: T. Lien Tran
– volume: 6
  start-page: 67
  year: 2013
  ident: 1525_CR10
  publication-title: Prikl. Fiz., No.
  contributor:
    fullname: K. O. Boltar
– volume: 62
  start-page: 143
  year: 2014
  ident: 1525_CR4
  publication-title: Infrared Phys. Technol.
  doi: 10.1016/j.infrared.2013.11.010
  contributor:
    fullname: W. Sun
– volume: 36
  start-page: 342
  year: 2012
  ident: 1525_CR1
  publication-title: Prog. Quantum Electron.
  doi: 10.1016/j.pquantelec.2012.07.001
  contributor:
    fullname: A. Rogalski
– volume: 8
  start-page: 084998
  year: 2014
  ident: 1525_CR8
  publication-title: J. Appl. Remote Sens.
  doi: 10.1117/1.JRS.8.084998
  contributor:
    fullname: D. Z. Ting
– volume: 65
  start-page: 3338
  year: 1994
  ident: 1525_CR7
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.112384
  contributor:
    fullname: E. Michel
– volume: 6
  start-page: 733
  year: 2013
  ident: 1525_CR11
  publication-title: Usp. Prikl. Fiz., No.
  contributor:
    fullname: K. O. Boltar
SSID ssj0011856
Score 2.1562314
Snippet The MBE method has been applied to grow InSb layers on InSb substrates. These layers have served as a basis for fabricating mid-wave IR photodetector arrays....
The MBE method has been applied to grow InSb layers on InSb substrates. These layers have served as a basis for fabricating mid-wave iR photodetector arrays....
SourceID proquest
gale
crossref
springer
SourceType Aggregation Database
Publisher
StartPage 915
SubjectTerms Arrays
Classical and Continuum Physics
Epitaxy
Indium antimonide
Intermetallic compounds
Physics
Physics and Astronomy
Single crystals
Solid State Electronics
Substrates
Title MBE-grown InSb photodetector arrays
URI https://link.springer.com/article/10.1134/S1063784217060044
https://www.proquest.com/docview/1912986411/abstract/
Volume 62
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1LS8NAEB5qRfDiW6wvAgqCkprsbpLtsZXWF3pRQU9hX1EopKVND_rrnd2kolYPPWeTZTezM983szMDcIw2XcSZCf1EEyQogsR-SxvtS6KoAxXE2Hznu_v46ondPEfPNSBfrou835xGJJ2iLtuOsPMH5C404Yy4ei8BYwuwGNmu1HVYbF--3Ha_YgdogVxOEY737QtVLPPPj_ywRr918kxw1Nmc3mqZBzh2pQrtVZN-c1LIpvqYLeQ4x3LWYKWCoF67lJl1qJl8A5bcVVA13oSju07Xf7Xs3LvOH6Q3fBsUA20K5973xGgk3sdb8NTrPl5c-VUrBV8hoCj8mOqII_NhvJW1DIKklqKco2qjOgtkJhDFiVAFmiJ7EkJFGc24CRKtmEGGqCndhno-yM0OeJxkIpERC5VCKKUShBQsMZyFMohlLLMGnE63NB2WFTNSxzQoS2dW3YATu-mpPU3FSChRJQXgVLYuVdqOShDEgwbsT_9LWh2zcYpkk9j68mHYgLPpPn97_N-0u3ON3oNlYo25873sQ70YTcwBQpFCHqLs9Tqd-8NKBj8BlnLQbA
link.rule.ids 315,786,790,27957,27958,41116,42185,52146
linkProvider Springer Nature
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV3NT4MwFH_RLUYvfhunU0k0MdEwgRYox2mm0zkvzmSeSL_QxGQzAw_61_soYHTqYUeg0PbR9v1-fR8FOEKdzoNEu3aoPCQo3AvsSGllC08SAyo8ncc79--C7gO9GfrDMo47rbzdK5OkWamLc0fo2T2SFxIy6pmELw6l81DHC-bXoN6-eux1vowHeM8EFWF5O3-hNGb--ZEf6mh6Uf5lHTVK53IFBlVzC1-Tl9ZbJlryYyqT44z9WYXlEoRa7WLUrMGcHq3DgnEGlekGHPbPO_ZTzs-t69G9sF6fx9lY6cxs8Ft8MuHv6SY8XHYGF127PEzBlggpMjsgymfIfSiLkkgjTIokYQwXN6ISRyQccRx3paMI8ifOpZ-QhGknVJJq5IiKkC2ojcYjvQ0W8xIeCp-6UiKYkiGCChpqRl3hBCIQSQNOKpnGr0XOjNhwDULjX71uwHEu9TifT9mES16GBWBVeWaquO0XMIg5DWhWPyYuJ1oaI9308gzzrtuA00rO3x7_V-3OTKUPYLE76N_Gt9d3vV1Y8nLVbnZimlDLJm96D4FJJvbLgfgJa2TSxA
linkToPdf http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV1JS8QwFH64oHhxF0dHLSgISse2SdvMcdQZdxFU0FPNqiB0hpnOQX-9L13E9SCemzZN8l7e9-UtAdhCm84jo303VgESFB5EblNp5YpAkhxUBNrmO19cRse39PQuvCvvOR1U0e6VS7LIabBVmtJsr6dMeQcJ3btGIkNiRoO8-ItH6SiMU9RaFPHx1tH9WfvdkYDmKE8wwvaufaF0bP74kU-m6esG_c1Tmhugzgw8VL9exJ08N4aZaMjXL1Ud_zG2WZguwanTKqRpDkZ0Og8TeZCoHCzA5sV-2320vN05Sa-F03vqZl2ls_zg3-H9Pn8ZLMJtp31zcOyWlyy4EqFG5kZEhQw5EWVN09QIn5qSMIabHlHGE4YjvuO-9BRBXsW5DA0xTHuxklQjd1SELMFY2k31MjgsMDwWIfWlRJAlYwQbNNaM-sKLRCRMDXaq-U16RS2NJOcghCbfRl2DbbsCidWzrM8lL9MFsCtbsSpphQU8Yl4N6tUiJaUCDhKkoYGtPO_7Ndit5vzD49-6XflT6w2YvDrsJOcnl2erMBVYi58f0NRhLOsP9RrilUyslzL5Bq-X258
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=MBE-grown+InSb+photodetector+arrays&rft.jtitle=Technical+physics&rft.au=Bakarov%2C+A.+K.&rft.au=Gutakovskii%2C+A.+K.&rft.au=Zhuravlev%2C+K.+S.&rft.au=Kovchavtsev%2C+A.+P.&rft.date=2017-06-01&rft.pub=Pleiades+Publishing&rft.issn=1063-7842&rft.eissn=1090-6525&rft.volume=62&rft.issue=6&rft.spage=915&rft.epage=919&rft_id=info:doi/10.1134%2FS1063784217060044&rft.externalDocID=10_1134_S1063784217060044
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1063-7842&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1063-7842&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1063-7842&client=summon