MBE-grown InSb photodetector arrays
The MBE method has been applied to grow InSb layers on InSb substrates. These layers have served as a basis for fabricating mid-wave IR photodetector arrays. The characteristics of photodetector arrays on epitaxial InSb layers have been compared with those of series-produced single-crystal InSb arra...
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Published in | Technical physics Vol. 62; no. 6; pp. 915 - 919 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
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Moscow
Pleiades Publishing
01.06.2017
Springer Springer Nature B.V |
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Abstract | The MBE method has been applied to grow InSb layers on InSb substrates. These layers have served as a basis for fabricating mid-wave IR photodetector arrays. The characteristics of photodetector arrays on epitaxial InSb layers have been compared with those of series-produced single-crystal InSb arrays. |
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AbstractList | The MBE method has been applied to grow InSb layers on InSb substrates. These layers have served as a basis for fabricating mid-wave IR photodetector arrays. The characteristics of photodetector arrays on epitaxial InSb layers have been compared with those of series-produced single-crystal InSb arrays. |
Audience | Academic |
Author | Zhuravlev, K. S. Burlakov, I. D. Bakarov, A. K. Lopukhin, A. A. Gutakovskii, A. K. Vlasov, P. V. Kovchavtsev, A. P. Toropov, A. I. Boltar’, K. O. |
Author_xml | – sequence: 1 givenname: A. K. surname: Bakarov fullname: Bakarov, A. K. email: bakarov@isp.nsc.ru organization: Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk State University – sequence: 2 givenname: A. K. surname: Gutakovskii fullname: Gutakovskii, A. K. organization: Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences – sequence: 3 givenname: K. S. surname: Zhuravlev fullname: Zhuravlev, K. S. organization: Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk State University – sequence: 4 givenname: A. P. surname: Kovchavtsev fullname: Kovchavtsev, A. P. organization: Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences – sequence: 5 givenname: A. I. surname: Toropov fullname: Toropov, A. I. organization: Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences – sequence: 6 givenname: I. D. surname: Burlakov fullname: Burlakov, I. D. organization: AO NPO Orion – sequence: 7 givenname: K. O. surname: Boltar’ fullname: Boltar’, K. O. organization: AO NPO Orion – sequence: 8 givenname: P. V. surname: Vlasov fullname: Vlasov, P. V. organization: AO NPO Orion – sequence: 9 givenname: A. A. surname: Lopukhin fullname: Lopukhin, A. A. organization: AO NPO Orion |
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Cites_doi | 10.1134/S1063782611110145 10.1103/PhysRevB.50.14965 10.1007/s11664-008-0558-5 10.1016/j.infrared.2013.11.010 10.1016/j.pquantelec.2012.07.001 10.1117/1.JRS.8.084998 10.1063/1.112384 |
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References | SunW.FanH.PengZ.ZhangL.ZhangX.ZhangL.LuZ.SiJ.EmelyanovE.PutyatoM.SemyaginB.PchelyakovO.PreobrazhenskiiV.Infrared Phys. Technol.2014621432014InPhT..62..143S10.1016/j.infrared.2013.11.010 Boltar’K. O.VlasovP. V.LopukhinA. A.PonomarenkoV. P.RantsanS. K.FadeevV. V.Prikl. Fiz., No.2013667 http://www.lockheedmartin.com/us/mfc/siteinformation/ santabarbara.html. KomkovO. S.SemenovA. N.FirsovD. D.Ya.MeltserB.Solov’evV. A.PopovaT. V.PikhtinA. N.IvanovS. V.Semiconductors20114514252011Semic..45.1425K10.1134/S1063782611110145 MichelE.SinghG.SlivkenS.BesikciC.BoveP.FergusonI.RazeghiM.Appl. Phys. Lett.19946533381994ApPhL..65.3338M10.1063/1.112384 http://www.scd.co.il. Lien TranT.HatamiF.Ted MasselinkW.KunetsV. P.SalamoG. J.J. Electron. Mater.20083717992008JEMat..37.1799T10.1007/s11664-008-0558-5 Boltar’K. O.VlasovP. V.LopukhinA. A.PoluneevV. V.RyabovaA. A.Usp. Prikl. Fiz., No.20136733 McConvilleC.JonesT.LeibsleF.DriverS.NoakesT.SchweitzerM.RichardsonN.Phys. Rev. B199450149651994PhRvB..5014965M10.1103/PhysRevB.50.14965 TingD. Z.SoibelA.KeoS. A.RafolS. B.MumoloJ. M.LiuJ. K.HillC. J.KhoshakhlaghA.HöglundL.LuongE. M.GunapalaS. D.J. Appl. Remote Sens.201480849982014JARS....8.4998T10.1117/1.JRS.8.084998 RogalskiA.Prog. Quantum Electron.2012363422012PQE....36..342R10.1016/j.pquantelec.2012.07.001 1525_CR3 W. Sun (1525_CR4) 2014; 62 K. O. Boltar (1525_CR10) 2013; 6 O. S. Komkov (1525_CR5) 2011; 45 A. Rogalski (1525_CR1) 2012; 36 1525_CR2 C. McConville (1525_CR9) 1994; 50 K. O. Boltar (1525_CR11) 2013; 6 T. Lien Tran (1525_CR6) 2008; 37 E. Michel (1525_CR7) 1994; 65 D. Z. Ting (1525_CR8) 2014; 8 |
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Snippet | The MBE method has been applied to grow InSb layers on InSb substrates. These layers have served as a basis for fabricating mid-wave IR photodetector arrays.... The MBE method has been applied to grow InSb layers on InSb substrates. These layers have served as a basis for fabricating mid-wave iR photodetector arrays.... |
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SubjectTerms | Arrays Classical and Continuum Physics Epitaxy Indium antimonide Intermetallic compounds Physics Physics and Astronomy Single crystals Solid State Electronics Substrates |
Title | MBE-grown InSb photodetector arrays |
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