MBE-grown InSb photodetector arrays

The MBE method has been applied to grow InSb layers on InSb substrates. These layers have served as a basis for fabricating mid-wave IR photodetector arrays. The characteristics of photodetector arrays on epitaxial InSb layers have been compared with those of series-produced single-crystal InSb arra...

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Bibliographic Details
Published inTechnical physics Vol. 62; no. 6; pp. 915 - 919
Main Authors Bakarov, A. K., Gutakovskii, A. K., Zhuravlev, K. S., Kovchavtsev, A. P., Toropov, A. I., Burlakov, I. D., Boltar’, K. O., Vlasov, P. V., Lopukhin, A. A.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.06.2017
Springer
Springer Nature B.V
Subjects
Arrays
Classical and Continuum Physics
Epitaxy
Indium antimonide
Intermetallic compounds
Physics
Physics and Astronomy
Single crystals
Solid State Electronics
Substrates
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Summary:The MBE method has been applied to grow InSb layers on InSb substrates. These layers have served as a basis for fabricating mid-wave IR photodetector arrays. The characteristics of photodetector arrays on epitaxial InSb layers have been compared with those of series-produced single-crystal InSb arrays.
ISSN:1063-7842
1090-6525
DOI:10.1134/S1063784217060044