Effect of stepped Si (001) substrate on Cu thin film growth

The growth processes of Cu thin film on stepped Si(001) substrate were investigated using molecular dynamics simulation. The modified embedded atom method was used to describe the atomic interaction between Cu-Cu, Si-Si, and Si-Cu. In this study, four different Si(001) substrate configurations were...

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Bibliographic Details
Published inSurface topography metrology and properties Vol. 11; no. 3; pp. 35020 - 35031
Main Authors Lablali, M, Mes-adi, H, Eddiai, A, Mazroui, M
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.09.2023
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