Effect of stepped Si (001) substrate on Cu thin film growth
The growth processes of Cu thin film on stepped Si(001) substrate were investigated using molecular dynamics simulation. The modified embedded atom method was used to describe the atomic interaction between Cu-Cu, Si-Si, and Si-Cu. In this study, four different Si(001) substrate configurations were...
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Published in | Surface topography metrology and properties Vol. 11; no. 3; pp. 35020 - 35031 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
IOP Publishing
01.09.2023
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Subjects | |
Online Access | Get full text |
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