A Study on the Metal Organic CVD of Pure Copper Films from Low Cost Copper(II) Dialkylamino-2-propoxides: Tuning the Thermal Properties of the Precursor by Small Variations of the Ligand

• Published in: Chemical vapor deposition Vol. 9; no. 3; pp. 149 - 156
• Main Authors: Becker, R., Devi, A., Weiß, J., Weckenmann, U., Winter, M., Kiener, C., Becker, H.-W., Fischer, R.A.
• Format: Journal Article
• Language: English
• Published: Weinheim WILEY-VCH Verlag 01.06.2003; WILEY‐VCH Verlag; Wiley-VCH
• Subjects: Amino alkoxides; Applied sciences; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Copper; Cross-disciplinary physics: materials science; rheology; CVD; CVD, metal‐organic; Exact sciences and technology; Materials science; metal-organic; Metals. Metallurgy; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Thermal analysis; Substituent effect; Inorganic compounds; Transition element complexes; Electrical conductivity; Crystal growth from vapors; Precursor; Thermal stability; Characterization; Thin films; Alkoxy complex; Copper II Complexes; Reaction mechanism; Copper; Crystal structure; Alkoxides; Aminoalcohol; Electrical properties; Experimental study; MOCVD; Thermal properties; CVD; Transition elements; Thermal analysis; Microstructure; Amino alkoxides
• DOI: 10.1002/cvde.200306236
• ISSN: 0948-1907

Pure copper metal thin films were grown on SiO2/Si(100) substrates by metal–organic (MO) CVD in a horizontal cold‐wall reactor employing the two metal–organic compounds, Cu(OCHMeCH2NR2)2, where R = Et (1) and R = Me (2) as precursors. Thermogravimetric analyses proved them to be convenient compounds for the deposition of copper without a reducing agent. Depositions were carried out at various substrate temperatures in the range 230–350 °C. X‐ray diffraction (XRD) indicated that the resulting films were highly crystalline and showed a strong (111) preferred orientation, which increased with increasing deposition temperature. Photoelectron spectroscopy (XPS) revealed that copper films deposited at 230 °C and 260 °C consisted solely of metallic copper with no detectable carbon, nitrogen, or oxygen contamination. Copper films obtained from 1 at 260 °C had a resistivity of 2.16 μΩ cm. Copper thin films exhibiting a bulk‐like resistivity of 2.16 μΩ cm have been grown on SiO2/Si substrate using copper(II) amino alkoxides as precursors (see Figure). The thermally induced deposition reaction was carried out in an inert atmosphere and the XRD analysis proved that the films were highly crystalline with a strong (111) preferred orientation. On the basis of RBS and XPS analysis, the deposits were free from carbon , oxygen, and nitrogen contamination.