Models for the self-heating evaluation of a gallium nitride-based high electron mobility transistor

• Published in: Semiconductor science and technology Vol. 36; no. 2; pp. 25019 - 25027
• Main Authors: Florovi, M, Ková, J, Chvála, A, Weis, M, Jacquet, J-C, Delage, S L
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.02.2021
• Subjects: average temperature; field-effect transistor; gallium nitride; high electron mobility transistor; thermal resistance

We propose a novel model approach for temperature evaluation in the channel region of a InAlN/AlN/gallium nitride high electron mobility transistor (HEMT) due to self-heating effects. The heat transfer in a HEMT device has been investigated experimentally by the nearby temperature sensor and compare...