Electrical properties of Cu doped p-ZnTe nanowires

• Published in: Nanotechnology Vol. 17; no. 24; pp. 5912 - 5915
• Main Authors: Huo, H B, Dai, L, Liu, C, You, L P, Yang, W Q, Ma, R M, Ran, G Z, Qin, G G
• Format: Journal Article
• Language: English
• Published: IOP Publishing 28.12.2006
• ISSN: 0957-4484; 1361-6528
• DOI: 10.1088/0957-4484/17/24/002

Single crystalline zincblende p-ZnTe nanowires (NWs) were synthesized via the vapour phase transport method. Based on either as-grown or Cu doped ZnTe NWs, single NW field effect transistors were fabricated and they were used to study the electrical properties of ZnTe NWs. Electrical transport measurements show that the as-grown ZnTe NWs are of p-type and very high resistivity. After 30 min immersion in Cu(NO3)2 solution, their conductivity can be increased by about three orders of magnitude. The hole concentrations of the p-type ZnTe nanowires could be controlled in a range from 7.0 X 1017 to 3.5 X 1018 cm-3 by changing the immersion duration. The doped p-type ZnTe NWs may have potential applications in nanoscale electronic and optoelectronic devices.