Recent progress on integrating two-dimensional materials with ferroelectrics for memory devices and photodetectors

• Published in: Chinese physics B Vol. 26; no. 3; pp. 114 - 120
• Main Author: 王建禄 胡伟达
• Format: Journal Article
• Language: English
• Published: Chinese Physical Society and IOP Publishing Ltd 01.03.2017
• Subjects: FeFET; ferroelectrics; photodetector; PVDF; two-dimensional materials
• ISSN: 1674-1056; 2058-3834
• DOI: 10.1088/1674-1056/26/3/037106

Two-dimensional （2D） materials, such as graphene and MoS2 related transition metal dichalcogenides （TMDC）, have attracted much attention for their potential applications. Ferroelectrics, one of the special and traditional dielectric materials, possess a spontaneous electric polarization that can be reversed by the application of an external electric field. In recent years, a new type of device, combining 2D materials with ferroelectrics, has been fabricated. Many novel devices have been fabricated, such as low power consumption memory devices, highly sensitive photo-transistors, etc. using this technique of hybrid systems incorporating ferroelectrics and 2D materials. This paper reviews two types of devices based on field effect transistor （FET） structures with ferroelectric gate dielectric construction （termed FeFET）. One type of device is for logic applications, such as a graphene and TMDC FeFET for fabricating memory units. Another device is for optoelectric applications, such as high performance phototransistors using a graphene p-n junction. Finally, we discuss the prospects for future applications of 2D material FeFET.