Deactivation of metastable single-crystal silicon hyperdoped with sulfur

• Published in: Journal of applied physics Vol. 114; no. 24
• Main Authors: Simmons, C. B., Akey, Austin J., Krich, Jacob J., Sullivan, Joseph T., Recht, Daniel, Aziz, Michael J., Buonassisi, Tonio
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 28.12.2013
• Subjects: ABSORPTION; ACTIVATION ENERGY; ANNEALING; Applied physics; Broadband; DEACTIVATION; DIFFUSION; DOPED MATERIALS; Electron transport; Electronics; ENERGY BEAM DEPOSITION; Energy gap; Heat treatment; ION IMPLANTATION; Laser beam melting; LASER RADIATION; MATERIALS SCIENCE; MELTING; METASTABLE STATES; MONOCRYSTALS; Optical data processing; Optical properties; PHOTONS; Pulsed lasers; SILICON; Single crystals; SOLID SOLUTIONS; SULFUR; SULFUR COMPLEXES; Transformations

Silicon supersaturated with sulfur by ion implantation and pulsed laser melting exhibits broadband optical absorption of photons with energies less than silicon's band gap. However, this metastable, hyperdoped material loses its ability to absorb sub-band gap light after subsequent thermal trea...