Physics-based modeling and characterization of low frequency noise behavior for AlxGa1−xN/GaN HEMT

• Published in: AIP advances Vol. 14; no. 3; pp. 035206 - 035206-7
• Main Authors: Cai, Jing, Yao, Ruo-He, Liu, Yu-Rong, Geng, Kui-Wei
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 01.03.2024; AIP Publishing LLC
• Subjects: Barrier layers; Current carriers; Electric fields; Gallium nitrides; High electron mobility transistors; LF noise; Linear functions; Physics; Semiconductor devices; Strain relaxation; Thickness; Threshold voltage; Very Low Frequencies

A physics-based low frequency noise (LFN) model for AlxGa1−xN/GaN high electron mobility transistors (HEMTs) is proposed in this article. By treating the distributed low-density surface donor states as the responsible mechanism and exhibiting charge neutrality in combination with the electric field...