Physics-based modeling and characterization of low frequency noise behavior for AlxGa1−xN/GaN HEMT
A physics-based low frequency noise (LFN) model for AlxGa1−xN/GaN high electron mobility transistors (HEMTs) is proposed in this article. By treating the distributed low-density surface donor states as the responsible mechanism and exhibiting charge neutrality in combination with the electric field...
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Published in | AIP advances Vol. 14; no. 3; pp. 035206 - 035206-7 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Melville
American Institute of Physics
01.03.2024
AIP Publishing LLC |
Subjects | |
Online Access | Get full text |
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