WO3 thin film prepared by pecvd technique and its gas sensing properties to NO2
Tungsten oxide films have been successfully fabricated from tungsten oxychloride (WOCl4) precursor by using plasma enhanced vapor deposition (PECVD) technique. The films were deposited onto silicon substrates and ceramic tubes maintained at 100°C under a constant operating pressure of He-O2 gas mixt...
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Published in | Journal of materials science Vol. 36; no. 10; pp. 2535 - 2538 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Heidelberg
Springer
01.01.2001
Springer Nature B.V |
Subjects | |
Online Access | Get full text |
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