WO3 thin film prepared by pecvd technique and its gas sensing properties to NO2

• Published in: Journal of materials science Vol. 36; no. 10; pp. 2535 - 2538
• Main Authors: Tong, Maosong, Dai, Guorui, Wu, Yuanda, He, Xiuli, Gao, Dingsan
• Format: Journal Article
• Language: English
• Published: Heidelberg Springer 01.01.2001; Springer Nature B.V
• Subjects: Analytical chemistry; Chemical analysis and related physical methods of analysis; Chemical vapor deposition; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Chemistry; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Gas mixtures; Gas sensors; General equipment and techniques; General, instrumentation; Instruments, apparatus, components and techniques common to several branches of physics and astronomy; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Nitrogen dioxide; Oxide coatings; Physics; Selectivity; Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing; Silicon; Silicon substrates; Stoichiometry; Surface analysis (chemical); Thin films; Tubes; Tungsten oxides; Vapor deposition; Inorganic compounds; Transition element compounds; Crystallization; Ultraviolet spectra; Oxides; Tungsten oxides; XRD; Amorphous state; Infrared spectra; Experimental study; Fabrication property relation; Photoelectron spectroscopy; Characterization; Thin films; Growth from vapor; X radiation; PECVD; Nitrogen dioxide; Thermal annealing; Gas sensors
• DOI: 10.1023/a:1017950619864
• ISSN: 0022-2461

Tungsten oxide films have been successfully fabricated from tungsten oxychloride (WOCl4) precursor by using plasma enhanced vapor deposition (PECVD) technique. The films were deposited onto silicon substrates and ceramic tubes maintained at 100°C under a constant operating pressure of He-O2 gas mixtures. The compositions and the structures of the thin films have been investigated by means of anaysis methods, such as XRD, XPS, UV and IR. The as-deposited WO3 thin films were amorphous state and became crystalline after annealing above 400°C. The surface analysis of the films indicates that stoichiometry O/W is 2.77 : 1. The gas sensing measurements of the WO3 thin film sensors indicate that these sensors have a high sensitivity, excellent selectivity and quick response behavior to NO2.