Synaptic element for neuromorphic computing using a magnetic domain wall device with synthetic pinning sites
The ability to make devices that mimic the human brain has been a subject of great interest in scientific research in recent years. Current artificial intelligence algorithms are primarily executed on the von Neumann hardware. This causes a bottleneck in processing speeds and is not energy efficient...
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Published in | Journal of physics. D, Applied physics Vol. 52; no. 44; pp. 445001 - 445005 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
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IOP Publishing
30.10.2019
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Abstract | The ability to make devices that mimic the human brain has been a subject of great interest in scientific research in recent years. Current artificial intelligence algorithms are primarily executed on the von Neumann hardware. This causes a bottleneck in processing speeds and is not energy efficient. In this work, we have demonstrated a synaptic element based on a magnetic domain wall device. The domain wall motion was controlled with the use of synthetic pinning sites, which were introduced by boron (B+) ion-implantation for local modification of the magnetic properties. The magnetization switching process of a Co/Pd multilayer structure with perpendicular magnetic anisotropy was observed by using MagVision Kerr microscopy system. The B+ implantation depth was controlled by varying the thickness of a Ta overcoat layer. The Kerr microscopy results correlate with the electrical measurements of the wire which show multiple resistive states. The control of the domain wall motion with the synthetic pinning sites is demonstrated to be a reliable technique for neuromorphic applications. |
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AbstractList | The ability to make devices that mimic the human brain has been a subject of great interest in scientific research in recent years. Current artificial intelligence algorithms are primarily executed on the von Neumann hardware. This causes a bottleneck in processing speeds and is not energy efficient. In this work, we have demonstrated a synaptic element based on a magnetic domain wall device. The domain wall motion was controlled with the use of synthetic pinning sites, which were introduced by boron (B+) ion-implantation for local modification of the magnetic properties. The magnetization switching process of a Co/Pd multilayer structure with perpendicular magnetic anisotropy was observed by using MagVision Kerr microscopy system. The B+ implantation depth was controlled by varying the thickness of a Ta overcoat layer. The Kerr microscopy results correlate with the electrical measurements of the wire which show multiple resistive states. The control of the domain wall motion with the synthetic pinning sites is demonstrated to be a reliable technique for neuromorphic applications. |
Author | Piramanayagam, S N Jin, Tianli Tan, Funan Sernicola, N R Gan, Weiliang Lew, Wen Siang |
Author_xml | – sequence: 1 givenname: Tianli surname: Jin fullname: Jin, Tianli organization: Nanyang Technological University Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, 637371, Singapore – sequence: 2 givenname: Weiliang orcidid: 0000-0001-9278-0718 surname: Gan fullname: Gan, Weiliang organization: Nanyang Technological University Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, 637371, Singapore – sequence: 3 givenname: Funan orcidid: 0000-0002-9646-2466 surname: Tan fullname: Tan, Funan organization: Nanyang Technological University Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, 637371, Singapore – sequence: 4 givenname: N R surname: Sernicola fullname: Sernicola, N R organization: Nanyang Technological University Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, 637371, Singapore – sequence: 5 givenname: Wen Siang surname: Lew fullname: Lew, Wen Siang organization: Nanyang Technological University Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, 637371, Singapore – sequence: 6 givenname: S N orcidid: 0000-0002-3178-2960 surname: Piramanayagam fullname: Piramanayagam, S N email: prem@ntu.edu.sg organization: Nanyang Technological University Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, 637371, Singapore |
BookMark | eNp9kMtLAzEQxoNUsFbvHnPy5Npk89j1KMUXFDyo55DNo03ZTZYktfS_d9eKB1FhmIGZ7_fBfKdg4oM3AFxgdI1RXc8x4bjglJO5bAhrqiMw_V5NwBShsixIVVYn4DSlDUKI8RpPQfuy97LPTkHTms74DG2I0JttDF2I_Xo4qND12-z8Cm7T2CXs5MqbkdGhk87DnWxbqM27UwbuXF7DtPd5_anonfcjlFw26QwcW9kmc_41Z-Dt_u518Vgsnx-eFrfLQhFGckEN1lVdGq5pw6y1SNXSUn5T15oqTYZXmLJckQqXDWoYskybhkqtmcWmIhWZAXTwVTGkFI0VfXSdjHuBkRjTEmM0YoxGHNIaEP4DUS7L7ILPUbr2P_DyALrQi03YRj98JrRgpaB0KIYQFr22g_DqF-Gfvh8GH468 |
CODEN | JPAPBE |
CitedBy_id | crossref_primary_10_3390_mi15060696 crossref_primary_10_1002_pssr_202200378 crossref_primary_10_1109_TED_2022_3142119 crossref_primary_10_1021_acsami_1c19916 crossref_primary_10_1063_5_0178084 crossref_primary_10_1038_s41598_020_58223_z crossref_primary_10_1063_5_0166419 crossref_primary_10_1002_aelm_202200939 crossref_primary_10_1021_acsami_2c20905 crossref_primary_10_1007_s10948_024_06821_7 crossref_primary_10_1021_acs_nanolett_4c00662 crossref_primary_10_1088_1361_6463_ad0568 crossref_primary_10_1016_j_jmmm_2021_168131 crossref_primary_10_3389_fnins_2021_661667 crossref_primary_10_1063_5_0049928 crossref_primary_10_1103_PhysRevApplied_16_054049 crossref_primary_10_1038_s41598_023_34040_y crossref_primary_10_1063_5_0233071 crossref_primary_10_1016_j_mattod_2023_10_004 crossref_primary_10_1063_5_0070773 crossref_primary_10_1016_j_physrep_2022_02_001 crossref_primary_10_1021_acsnano_2c09744 |
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ContentType | Journal Article |
Copyright | 2019 IOP Publishing Ltd |
Copyright_xml | – notice: 2019 IOP Publishing Ltd |
DBID | AAYXX CITATION |
DOI | 10.1088/1361-6463/ab35b7 |
DatabaseName | CrossRef |
DatabaseTitle | CrossRef |
DatabaseTitleList | |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering Physics |
DocumentTitleAlternate | Synaptic element for neuromorphic computing using a magnetic domain wall device with synthetic pinning sites |
EISSN | 1361-6463 |
ExternalDocumentID | 10_1088_1361_6463_ab35b7 dab35b7 |
GroupedDBID | -ET -~X 1JI 4.4 5B3 5GY 5PX 5VS 5ZH 6TJ 7.M 7.Q AAGCD AAGID AAJIO AAJKP AATNI ABCXL ABHWH ABJNI ABQJV ABVAM ACAFW ACGFO ACGFS ACHIP ACNCT AEFHF AFFNX AFYNE AKPSB ALMA_UNASSIGNED_HOLDINGS AOAED ASPBG ATQHT AVWKF AZFZN CBCFC CEBXE CJUJL CRLBU CS3 EBS EDWGO EMSAF EPQRW EQZZN F5P HAK IHE IJHAN IOP IZVLO KOT LAP M45 N5L N9A P2P PJBAE RIN RKQ RNS RO9 ROL RPA SY9 TAE TN5 UCJ W28 WH7 XPP XSW YQT ZMT AAYXX ADEQX CITATION |
ID | FETCH-LOGICAL-c353t-4e1d782e6d4b5fff0c8af46988d4cd30025cf6c3712b0b50f5deb4add5f1e7373 |
IEDL.DBID | IOP |
ISSN | 0022-3727 |
IngestDate | Thu Apr 24 23:04:16 EDT 2025 Tue Jul 01 01:45:17 EDT 2025 Wed Aug 21 03:40:24 EDT 2024 Thu Jan 07 13:51:27 EST 2021 |
IsDoiOpenAccess | false |
IsOpenAccess | true |
IsPeerReviewed | true |
IsScholarly | true |
Issue | 44 |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-LOGICAL-c353t-4e1d782e6d4b5fff0c8af46988d4cd30025cf6c3712b0b50f5deb4add5f1e7373 |
Notes | JPhysD-121155.R2 |
ORCID | 0000-0001-9278-0718 0000-0002-9646-2466 0000-0002-3178-2960 |
OpenAccessLink | https://iopscience.iop.org/article/10.1088/1361-6463/ab35b7/pdf |
PageCount | 5 |
ParticipantIDs | crossref_primary_10_1088_1361_6463_ab35b7 crossref_citationtrail_10_1088_1361_6463_ab35b7 iop_journals_10_1088_1361_6463_ab35b7 |
ProviderPackageCode | CITATION AAYXX |
PublicationCentury | 2000 |
PublicationDate | 2019-10-30 |
PublicationDateYYYYMMDD | 2019-10-30 |
PublicationDate_xml | – month: 10 year: 2019 text: 2019-10-30 day: 30 |
PublicationDecade | 2010 |
PublicationTitle | Journal of physics. D, Applied physics |
PublicationTitleAbbrev | JPhysD |
PublicationTitleAlternate | J. Phys. D: Appl. Phys |
PublicationYear | 2019 |
Publisher | IOP Publishing |
Publisher_xml | – name: IOP Publishing |
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References_xml | – ident: 23 doi: 10.1007/s10853-018-2134-6 – ident: 26 doi: 10.1063/1.5041793 – ident: 33 doi: 10.1063/1.3653823 – ident: 6 doi: 10.1016/j.pecs.2008.01.001 – ident: 9 doi: 10.1109/4.535411 – ident: 18 doi: 10.1002/adfm.201202383 – volume: 49 issn: 0022-3727 year: 2016 ident: 31 publication-title: J. Phys. D: Appl. Phys. doi: 10.1088/0022-3727/49/42/425002 – year: 2016 ident: 11 publication-title: 46th European Solid-State Device Research Conf. – ident: 21 doi: 10.1016/j.cap.2011.12.019 – ident: 13 doi: 10.1016/j.agsy.2017.01.023 – ident: 17 doi: 10.1016/j.mee.2018.01.009 – ident: 4 doi: 10.1039/c3nr01176c – ident: 5 doi: 10.1038/nature16961 – ident: 10 doi: 10.1016/j.mattod.2017.07.007 – ident: 12 doi: 10.1002/aelm.201400056 – ident: 1 doi: 10.1016/j.jacc.2017.03.571 – ident: 37 doi: 10.1109/TMAG.2005.855285 – volume: 27 issn: 0957-4484 year: 2016 ident: 16 publication-title: Nanotechnology – volume: 48 start-page: 24 year: 2015 ident: 8 publication-title: Computer – ident: 36 doi: 10.1002/pssr.201800197 – ident: 24 doi: 10.1038/nmat2023 – ident: 35 doi: 10.1166/jno.2008.305 – ident: 14 doi: 10.1007/s10470-018-1155-z – ident: 3 doi: 10.1002/minf.201700153 – ident: 28 doi: 10.1038/nnano.2014.324 – ident: 2 doi: 10.1016/j.jacr.2017.12.026 – ident: 32 doi: 10.1016/j.apsusc.2012.05.006 – ident: 38 doi: 10.1063/1.2164416 – ident: 20 doi: 10.1186/s11671-017-2114-9 – ident: 19 doi: 10.1063/1.5042408 – ident: 27 doi: 10.1038/nnano.2015.41 – ident: 39 doi: 10.1016/j.jmmm.2004.10.030 – volume: 10 issn: 1882-0786 year: 2017 ident: 29 publication-title: Appl. Phys. Express doi: 10.7567/APEX.10.013007 – ident: 22 doi: 10.1126/science.246.4936.1400 – ident: 25 doi: 10.1038/srep30039 – ident: 30 doi: 10.1063/1.4906281 – ident: 15 doi: 10.1038/nmat4856 – volume: 44 issn: 0022-3727 year: 2011 ident: 34 publication-title: J. Phys. D: Appl. Phys. – ident: 7 doi: 10.1016/j.rser.2015.04.065 |
SSID | ssj0005681 |
Score | 2.4200776 |
Snippet | The ability to make devices that mimic the human brain has been a subject of great interest in scientific research in recent years. Current artificial... |
SourceID | crossref iop |
SourceType | Enrichment Source Index Database Publisher |
StartPage | 445001 |
SubjectTerms | domain wall device domain wall pinning neuromorphic computing |
Title | Synaptic element for neuromorphic computing using a magnetic domain wall device with synthetic pinning sites |
URI | https://iopscience.iop.org/article/10.1088/1361-6463/ab35b7 |
Volume | 52 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1La9wwEB7yoJAc2uZRmr6iQ3vIwbv26mGFnEJpCIE0gTSQQ0FII2kJ2fUu2V3C5td3ZDvbpJRQCj4YPJLFSJ758Mx8A_A5BjKMNveZjBwz0StUZrXzWYmB0AIZQ6FTvfPpd3V8KU6u5NUSHCxqYUbj1vR36LYhCm5U2CbE6W7BVZEpoXjXOi5duQyrXJPjTNV7Z-e_8zuULhZU4eSl2xjl32Z44pOW6b2PXMzRK_j5sLgms-SmM5u6Dt7_wdv4n6t_DS9b6MkOG9ENWArVJqw_IiTchBd1QihOtmBwMa8smRNkoUkwZ4RuWc1-ORzR3tADrBtC0DiWkuf7zLKh7VepKJL50dBeV-zODgbMh2SMWPrhyybzigBnkhhf172SWApeT7bh8ujbj6_HWduZIUMu-TQTofAELYLywskYY47axtSLUnuBnicghVEhL4uey53Mo_TBCTKlMhah5CV_AyvVqApvgWk6HjJZFUszJPrTHHE_BlSIpSesswPdh70x2NKWp-4ZA1OHz7U2SaMmadQ0Gt2BvcWIcUPZ8YzsF9oo0363k2fkdp_IeSN7Rgi6JPl5M_bx3T_O9B7WCHPt1-4v_wAr09tZ-Ei4Zuo-1ef3F28j8M4 |
linkProvider | IOP Publishing |
linkToPdf | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMw1V3NThRBEK4ABoMHFNSAqPQBDh5md2b6Z5oDByJuQBRIlIRb27-EsDu7YZaQ9aV8FR_J6plhBWOIFw4mc5hkqjvT3dVV30xXfQWwETwaRp26hAdqE5ZnItHSuKSwHtECGkMmY77z50Oxd8I-nvLTGfgxzYUZjlrT38Hbhii4mcI2IE52MyqyRDBBu9pQboruyIU2qvLAT67xm63a3t_FBd7M896Hr-_3krasQGIpp-OE-cyhX_TCMcNDCKmVOsRCitIx62hEATYIS4ssN6nhaeDOG4Z2gIfMF7Sg2O8sPOIUfXXMGDw6_h1TImQ2pSdHZNCei_7tre_4wVkc6y231nsKP28mpIlmuehcjU3Hfv-DK_I_mrFnsNhCbLLTvN4SzPhyGZ7cIl5chvk68NVWz6H_ZVJqNJuW-CaQniCKJzXL52CIOogPbF34AtuRmCRwRjQZ6LMyJn8SNxzo85Jc636fOB-NLok_tkk1KRFYR4nReV0TisRD-uoFnDzIwF_CXDks_QoQiduAR-upsYdI85pauxW8FdYWDjHdKnRv9EHZlp49VgnpqzpMQEoVV1HFVVTNKq7Cu2mLUUNNco_sJiqHau1TdY_c-h05p3iuGMOLI55RqDev_rGndXh8vNtTn_YPD9ZgAWHmVu3x09cwN7688m8Qyo3N23r7EPj20Nr3C47nUmI |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Synaptic+element+for+neuromorphic+computing+using+a+magnetic+domain+wall+device+with+synthetic+pinning+sites&rft.jtitle=Journal+of+physics.+D%2C+Applied+physics&rft.au=Jin%2C+Tianli&rft.au=Gan%2C+Weiliang&rft.au=Tan%2C+Funan&rft.au=Sernicola%2C+N+R&rft.date=2019-10-30&rft.issn=0022-3727&rft.eissn=1361-6463&rft.volume=52&rft.issue=44&rft.spage=445001&rft_id=info:doi/10.1088%2F1361-6463%2Fab35b7&rft.externalDBID=n%2Fa&rft.externalDocID=10_1088_1361_6463_ab35b7 |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0022-3727&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0022-3727&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0022-3727&client=summon |