Intrinsic quantized anomalous Hall effect in a moiré heterostructure
Quantum anomalous Hall effect—the appearance of quantized Hall conductance at zero magnetic field—has been observed in thin films of the topological insulator Bi 2 Se 3 doped with magnetic atoms. The doping, however, introduces inhomogeneity, reducing the temperature at which the effect occurs. Two...
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| Published in | Science (American Association for the Advancement of Science) Vol. 367; no. 6480; pp. 900 - 903 |
|---|---|
| Main Authors | , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
United States
The American Association for the Advancement of Science
21.02.2020
American Association for the Advancement of Science (AAAS) |
| Subjects | |
| Online Access | Get full text |
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| Abstract | Quantum anomalous Hall effect—the appearance of quantized Hall conductance at zero magnetic field—has been observed in thin films of the topological insulator Bi
2
Se
3
doped with magnetic atoms. The doping, however, introduces inhomogeneity, reducing the temperature at which the effect occurs. Two groups have now observed quantum anomalous Hall effect in intrinsically magnetic materials (see the Perspective by Wakefield and Checkelsky). Serlin
et al.
did so in twisted bilayer graphene aligned to hexagonal boron nitride, where the effect enabled the switching of magnetization with tiny currents. In a complementary work, Deng
et al.
observed quantum anomalous Hall effect in the antiferromagnetic layered topological insulator MnBi
2
Te
4
.
Science
, this issue p.
900
, p.
895
; see also p.
848
Transport measurements indicate quantized Hall conductance without a magnetic field.
The quantum anomalous Hall (QAH) effect combines topology and magnetism to produce precisely quantized Hall resistance at zero magnetic field. We report the observation of a QAH effect in twisted bilayer graphene aligned to hexagonal boron nitride. The effect is driven by intrinsic strong interactions, which polarize the electrons into a single spin- and valley-resolved moiré miniband with Chern number
C
= 1. In contrast to magnetically doped systems, the measured transport energy gap is larger than the Curie temperature for magnetic ordering, and quantization to within 0.1% of the von Klitzing constant persists to temperatures of several kelvin at zero magnetic field. Electrical currents as small as 1 nanoampere controllably switch the magnetic order between states of opposite polarization, forming an electrically rewritable magnetic memory. |
|---|---|
| AbstractList | The quantum anomalous Hall (QAH) effect combines topology and magnetism to produce precisely quantized Hall resistance at zero magnetic field. We report the observation of a QAH effect in twisted bilayer graphene aligned to hexagonal boron nitride. The effect is driven by intrinsic strong interactions, which polarize the electrons into a single spin- and valley-resolved moiré miniband with Chern number
C
= 1. In contrast to magnetically doped systems, the measured transport energy gap is larger than the Curie temperature for magnetic ordering, and quantization to within 0.1% of the von Klitzing constant persists to temperatures of several kelvin at zero magnetic field. Electrical currents as small as 1 nanoampere controllably switch the magnetic order between states of opposite polarization, forming an electrically rewritable magnetic memory. The quantum anomalous Hall (QAH) effect combines topology and magnetism to produce precisely quantized Hall resistance at zero magnetic field. We report the observation of a QAH effect in twisted bilayer graphene aligned to hexagonal boron nitride. The effect is driven by intrinsic strong interactions, which polarize the electrons into a single spin- and valley-resolved moiré miniband with Chern number = 1. In contrast to magnetically doped systems, the measured transport energy gap is larger than the Curie temperature for magnetic ordering, and quantization to within 0.1% of the von Klitzing constant persists to temperatures of several kelvin at zero magnetic field. Electrical currents as small as 1 nanoampere controllably switch the magnetic order between states of opposite polarization, forming an electrically rewritable magnetic memory. The quantum anomalous Hall (QAH) effect combines topology and magnetism to produce precisely quantized Hall resistance at zero magnetic field. We report the observation of a QAH effect in twisted bilayer graphene aligned to hexagonal boron nitride. The effect is driven by intrinsic strong interactions, which polarize the electrons into a single spin- and valley-resolved moiré miniband with Chern number C = 1. In contrast to magnetically doped systems, the measured transport energy gap is larger than the Curie temperature for magnetic ordering, and quantization to within 0.1% of the von Klitzing constant persists to temperatures of several kelvin at zero magnetic field. Electrical currents as small as 1 nanoampere controllably switch the magnetic order between states of opposite polarization, forming an electrically rewritable magnetic memory.The quantum anomalous Hall (QAH) effect combines topology and magnetism to produce precisely quantized Hall resistance at zero magnetic field. We report the observation of a QAH effect in twisted bilayer graphene aligned to hexagonal boron nitride. The effect is driven by intrinsic strong interactions, which polarize the electrons into a single spin- and valley-resolved moiré miniband with Chern number C = 1. In contrast to magnetically doped systems, the measured transport energy gap is larger than the Curie temperature for magnetic ordering, and quantization to within 0.1% of the von Klitzing constant persists to temperatures of several kelvin at zero magnetic field. Electrical currents as small as 1 nanoampere controllably switch the magnetic order between states of opposite polarization, forming an electrically rewritable magnetic memory. Quantum anomalous Hall goes intrinsicQuantum anomalous Hall effect—the appearance of quantized Hall conductance at zero magnetic field—has been observed in thin films of the topological insulator Bi2Se3 doped with magnetic atoms. The doping, however, introduces inhomogeneity, reducing the temperature at which the effect occurs. Two groups have now observed quantum anomalous Hall effect in intrinsically magnetic materials (see the Perspective by Wakefield and Checkelsky). Serlin et al. did so in twisted bilayer graphene aligned to hexagonal boron nitride, where the effect enabled the switching of magnetization with tiny currents. In a complementary work, Deng et al. observed quantum anomalous Hall effect in the antiferromagnetic layered topological insulator MnBi2Te4.Science, this issue p. 900, p. 895; see also p. 848The quantum anomalous Hall (QAH) effect combines topology and magnetism to produce precisely quantized Hall resistance at zero magnetic field. We report the observation of a QAH effect in twisted bilayer graphene aligned to hexagonal boron nitride. The effect is driven by intrinsic strong interactions, which polarize the electrons into a single spin- and valley-resolved moiré miniband with Chern number C = 1. In contrast to magnetically doped systems, the measured transport energy gap is larger than the Curie temperature for magnetic ordering, and quantization to within 0.1% of the von Klitzing constant persists to temperatures of several kelvin at zero magnetic field. Electrical currents as small as 1 nanoampere controllably switch the magnetic order between states of opposite polarization, forming an electrically rewritable magnetic memory. Quantum anomalous Hall effect—the appearance of quantized Hall conductance at zero magnetic field—has been observed in thin films of the topological insulator Bi 2 Se 3 doped with magnetic atoms. The doping, however, introduces inhomogeneity, reducing the temperature at which the effect occurs. Two groups have now observed quantum anomalous Hall effect in intrinsically magnetic materials (see the Perspective by Wakefield and Checkelsky). Serlin et al. did so in twisted bilayer graphene aligned to hexagonal boron nitride, where the effect enabled the switching of magnetization with tiny currents. In a complementary work, Deng et al. observed quantum anomalous Hall effect in the antiferromagnetic layered topological insulator MnBi 2 Te 4 . Science , this issue p. 900 , p. 895 ; see also p. 848 Transport measurements indicate quantized Hall conductance without a magnetic field. The quantum anomalous Hall (QAH) effect combines topology and magnetism to produce precisely quantized Hall resistance at zero magnetic field. We report the observation of a QAH effect in twisted bilayer graphene aligned to hexagonal boron nitride. The effect is driven by intrinsic strong interactions, which polarize the electrons into a single spin- and valley-resolved moiré miniband with Chern number C = 1. In contrast to magnetically doped systems, the measured transport energy gap is larger than the Curie temperature for magnetic ordering, and quantization to within 0.1% of the von Klitzing constant persists to temperatures of several kelvin at zero magnetic field. Electrical currents as small as 1 nanoampere controllably switch the magnetic order between states of opposite polarization, forming an electrically rewritable magnetic memory. |
| Author | Zhu, J. Serlin, M. Balents, L. Tschirhart, C. L. Polshyn, H. Young, A. F. Watanabe, K. Taniguchi, T. Zhang, Y. |
| Author_xml | – sequence: 1 givenname: M. surname: Serlin fullname: Serlin, M. organization: Department of Physics, University of California, Santa Barbara, Santa Barbara, CA 93106, USA – sequence: 2 givenname: C. L. orcidid: 0000-0002-8906-3950 surname: Tschirhart fullname: Tschirhart, C. L. organization: Department of Physics, University of California, Santa Barbara, Santa Barbara, CA 93106, USA – sequence: 3 givenname: H. orcidid: 0000-0001-8223-8896 surname: Polshyn fullname: Polshyn, H. organization: Department of Physics, University of California, Santa Barbara, Santa Barbara, CA 93106, USA – sequence: 4 givenname: Y. orcidid: 0000-0003-0369-0230 surname: Zhang fullname: Zhang, Y. organization: Department of Physics, University of California, Santa Barbara, Santa Barbara, CA 93106, USA – sequence: 5 givenname: J. surname: Zhu fullname: Zhu, J. organization: Department of Physics, University of California, Santa Barbara, Santa Barbara, CA 93106, USA – sequence: 6 givenname: K. orcidid: 0000-0003-3701-8119 surname: Watanabe fullname: Watanabe, K. organization: National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan – sequence: 7 givenname: T. surname: Taniguchi fullname: Taniguchi, T. organization: National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan – sequence: 8 givenname: L. orcidid: 0000-0002-2377-2711 surname: Balents fullname: Balents, L. organization: Kavli Institute for Theoretical Physics, University of California, Santa Barbara, Santa Barbara, CA 93106, USA – sequence: 9 givenname: A. F. orcidid: 0000-0001-5954-8028 surname: Young fullname: Young, A. F. organization: Department of Physics, University of California, Santa Barbara, Santa Barbara, CA 93106, USA |
| BackLink | https://www.ncbi.nlm.nih.gov/pubmed/31857492$$D View this record in MEDLINE/PubMed https://www.osti.gov/biblio/1600874$$D View this record in Osti.gov |
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| ContentType | Journal Article |
| Copyright | Copyright © 2020 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Copyright © 2020 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works |
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| Snippet | Quantum anomalous Hall effect—the appearance of quantized Hall conductance at zero magnetic field—has been observed in thin films of the topological insulator... The quantum anomalous Hall (QAH) effect combines topology and magnetism to produce precisely quantized Hall resistance at zero magnetic field. We report the... Quantum anomalous Hall goes intrinsicQuantum anomalous Hall effect—the appearance of quantized Hall conductance at zero magnetic field—has been observed in... |
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| SubjectTerms | Boron Conductance Electromagnetism Graphene Hall effect Heterostructures Magnetic fields Magnetism Thin films Topology |
| Title | Intrinsic quantized anomalous Hall effect in a moiré heterostructure |
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