Integrated 1D epitaxial mirror twin boundaries for ultrascaled 2D MoS2 field-effect transistors - Ahn, Heonsu; Moon, Gunho; Jung, Hang-gyo; Deng, Bingchen; Yang, Dong-Hwan; Yang, Sera; Han, Cheolhee; Cho, Hyunje; Yeo, Youngki; Kim, Cheol-Joo; Yang, Chan-Ho; Kim, Jonghwan; et al. (Nature nanotechnology, 2024)
Keywords: 140/125; 142/126; 639/301/357/1018; 639/301/357/551; 639/925/357/995; 639/925/927/1007; Angle of reflection; Boundaries; Capacitance; Chemistry and Materials Science; Crystal defects; Crystals; Dislocations; Electron states; Epitaxy; Field effect transistors; Gates (circuits); Grain boundaries; Materials Science; Molybdenum disulfide; Nanotechnology; Nanotechnology and Microengineering; Semiconductor devices; Transistor circuits; Transistors; Twin boundaries