Effects of pressure on pulsed laser deposition of HgCdTe films

HgCdTe thin films have been deposited on Si (1 1 1) substrates at different pressures by pulsed laser deposition (PLD). The HgCdTe thin films obtained at different pressures were characterized by X-ray diffraction (XRD), energy-dispersive X-ray analysis (EDXA), scanning electron microscopy (SEM) and...

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Published inMaterials chemistry and physics Vol. 108; no. 2; pp. 274 - 277
Main Authors Liu, M., Man, B.Y., Lin, X.C., Li, X.Y.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 15.04.2008
Subjects
Crystal growth
Crystal structure
Plasma deposition
Thin films
Thin films
Crystal growth
Plasma deposition
Crystal structure
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Summary:HgCdTe thin films have been deposited on Si (1 1 1) substrates at different pressures by pulsed laser deposition (PLD). The HgCdTe thin films obtained at different pressures were characterized by X-ray diffraction (XRD), energy-dispersive X-ray analysis (EDXA), scanning electron microscopy (SEM) and selected area electron diffraction (SAED). The results show that in our experimental conditions, the thickness, crystallinity, chemical content and surface morphology of the HgCdTe thin films have a strong relation to the change of pressure. The film obtained at 5 × 10 −2 Pa has the highest crystal quality with the lowest Hg content.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0254-0584
1879-3312
DOI:10.1016/j.matchemphys.2007.09.036