Characterization of deep acceptor level in as-grown ZnO thin film by molecular beam epitaxy

• Published in: Chinese physics B Vol. 23; no. 9; pp. 364 - 368
• Main Authors: Asghar, M., Mahmood, K., Hasan, M. A., Ferguson, I. T., Tsu, R., Willander, M.
• Format: Journal Article
• Language: English
• Published: 01.09.2014
• Subjects: Cross sections; Devices; Luminescence; Molecular beam epitaxy; Secondary ion mass spectroscopy; Silicon substrates; Thin films; Vacancies; Zinc oxide; ZnO膜; ZnO薄膜; 分子束外延; 拉曼光谱法; 深能级瞬态谱; 混合导电性; 特性; 生长; ZnO; secondary ion mass spectroscopy; photoluminescence; Raman spectroscopy

We report deep level transient spectroscopy results from ZnO layers grown on silicon by molecular beam epitaxy （MBE）, The hot probe measurements reveal mixed conductivity in the as-grown ZnO layers, and the current-voltage （l-V） measurements demonstrate a good quality p-type Schottky device. A new d...