Characterization of deep acceptor level in as-grown ZnO thin film by molecular beam epitaxy
We report deep level transient spectroscopy results from ZnO layers grown on silicon by molecular beam epitaxy (MBE), The hot probe measurements reveal mixed conductivity in the as-grown ZnO layers, and the current-voltage (l-V) measurements demonstrate a good quality p-type Schottky device. A new d...
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Published in | Chinese physics B Vol. 23; no. 9; pp. 364 - 368 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
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01.09.2014
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Abstract | We report deep level transient spectroscopy results from ZnO layers grown on silicon by molecular beam epitaxy (MBE), The hot probe measurements reveal mixed conductivity in the as-grown ZnO layers, and the current-voltage (l-V) measurements demonstrate a good quality p-type Schottky device. A new deep acceptor level is observed in the ZnO layer having activation energy of 0.49 ± 0.03 eV and capture cross-section of 8,57 ×10^-18 cm^2. Based on the results from Raman spectroscopy, photoluminescence, and secondary ion mass spectroscopy (SIMS) of the ZnO layer, the observed acceptor trap level is tentatively attributed to a nitrogen-zinc vacancy complex in ZnO, |
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AbstractList | We report deep level transient spectroscopy results from ZnO layers grown on silicon by molecular beam epitaxy (MBE). The hot probe measurements reveal mixed conductivity in the as-grown ZnO layers, and the current-voltage (I-V) measurements demonstrate a good quality p-type Schottky device. A new deep acceptor level is observed in the ZnO layer having activation energy of 0.49 +/- 0.03 eV and capture cross-section of 8.57 +/- 10(-18) cm(2). Based on the results from Raman spectroscopy, photoluminescence, and secondary ion mass spectroscopy (SIMS) of the ZnO layer, the observed acceptor trap level is tentatively attributed to a nitrogen-zinc vacancy complex in ZnO. We report deep level transient spectroscopy results from ZnO layers grown on silicon by molecular beam epitaxy (MBE), The hot probe measurements reveal mixed conductivity in the as-grown ZnO layers, and the current-voltage (l-V) measurements demonstrate a good quality p-type Schottky device. A new deep acceptor level is observed in the ZnO layer having activation energy of 0.49 ± 0.03 eV and capture cross-section of 8,57 ×10^-18 cm^2. Based on the results from Raman spectroscopy, photoluminescence, and secondary ion mass spectroscopy (SIMS) of the ZnO layer, the observed acceptor trap level is tentatively attributed to a nitrogen-zinc vacancy complex in ZnO, We report deep level transient spectroscopy results from ZnO layers grown on silicon by molecular beam epitaxy (MBB). The hot probe measurements reveal mixed conductivity in the as-grown ZnO layers, and the current-voltage (I-V) measurements demonstrate a good quality p-type Schottky device. A new deep acceptor level is observed in the ZnO layer having activation energy of 0.49+ or -0.03 eV and capture cross-section of 8.57 x 10 super(-18) cm super(2). Based on the results from Raman spectroscopy, photo luminescence, and secondary ion mass spectroscopy (SIMS) of the ZnO layer, the observed acceptor trap level is tentatively attributed to a nitrogen-zinc vacancy complex in ZnO. |
Author | M. Asghar K. Mahmood M. A. Hasan I. T. Ferguson R. Tsu M. Willander |
AuthorAffiliation | Department of Physics, The Islamia University of Bahawalpur, Bahawalpur, 63100, Pakistan Department of Electrical and Computer Engineering, University of North Carolina Charlotte, NC 28223, USA Department of Science and Technology, Linkoping University Norrkoping, Sweden |
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CitedBy_id | crossref_primary_10_1016_j_ssc_2022_115046 crossref_primary_10_1039_C6RA25921A crossref_primary_10_1016_j_jpcs_2021_110535 crossref_primary_10_1016_j_ceramint_2017_06_048 |
Cites_doi | 10.1016/j.tsf.2012.02.081 10.1063/1.3473762 10.1088/0022-3727/42/5/055110 10.1088/1468-6996/12/3/034302 10.1063/1.1663718 10.1063/1.2828017 10.1063/1.2924437 10.1063/1.3274043 10.1016/j.apsusc.2011.01.116 10.1063/1.4802753 10.1016/j.jallcom.2008.09.131 10.1063/1.4751857 10.1063/1.3562608 10.1016/j.physb.2009.07.165 10.1063/1.3380592 10.1063/1.3243454 10.1063/1.3468690 10.1063/1.3551534 10.4028/www.scientific.net/AMR.79-82.1317 10.1103/PhysRevB.74.081201 10.1103/PhysRevB.66.073202 10.1063/1.3541885 10.1063/1.1415050 10.1063/1.3153515 10.1103/PhysRevLett.108.215501 10.1088/0268-1242/28/10/105019 |
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DocumentTitleAlternate | Characterization of deep acceptor level in as-grown ZnO thin film by molecular beam epitaxy |
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Keywords | ZnO secondary ion mass spectroscopy photoluminescence Raman spectroscopy |
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Notes | ZnO, secondary ion mass spectroscopy, photoluminescence, Raman spectroscopy M. Asghar, K. Mahmood, M. A. Hasan, I. T. Ferguson, R. Tsu, M. WiUander(1.Department of Physics, The Islamia University of Bahawalpur, Bahawalpur, 63100, Pakistan; 2. Department of Electrical and Computer Engineering, University of North Carolina Charlotte, NC 28223, USA; 2. Department of Science and Technology, Link6ping University Norrkoping, Sweden) We report deep level transient spectroscopy results from ZnO layers grown on silicon by molecular beam epitaxy (MBE), The hot probe measurements reveal mixed conductivity in the as-grown ZnO layers, and the current-voltage (l-V) measurements demonstrate a good quality p-type Schottky device. A new deep acceptor level is observed in the ZnO layer having activation energy of 0.49 ± 0.03 eV and capture cross-section of 8,57 ×10^-18 cm^2. Based on the results from Raman spectroscopy, photoluminescence, and secondary ion mass spectroscopy (SIMS) of the ZnO layer, the observed acceptor trap level is tentatively attributed to a nitrogen-zinc vacancy complex in ZnO 11-5639/O4 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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References | 23 24 25 26 27 Muhammad A (28) 2011; 35 Dongqi Y (7) 2009; 42 10 12 13 14 15 16 17 Tarun M C (11) 2011; 1 18 Fumiyasu O (22) 2011; 12 19 Muhammad A (2) 2013; 28 1 3 4 5 6 8 9 20 21 |
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Snippet | We report deep level transient spectroscopy results from ZnO layers grown on silicon by molecular beam epitaxy (MBE), The hot probe measurements reveal mixed... We report deep level transient spectroscopy results from ZnO layers grown on silicon by molecular beam epitaxy (MBB). The hot probe measurements reveal mixed... We report deep level transient spectroscopy results from ZnO layers grown on silicon by molecular beam epitaxy (MBE). The hot probe measurements reveal mixed... |
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SubjectTerms | Cross sections Devices Luminescence Molecular beam epitaxy Secondary ion mass spectroscopy Silicon substrates Thin films Vacancies Zinc oxide ZnO膜 ZnO薄膜 分子束外延 拉曼光谱法 深能级瞬态谱 混合导电性 特性 生长 |
Title | Characterization of deep acceptor level in as-grown ZnO thin film by molecular beam epitaxy |
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