Characterization of deep acceptor level in as-grown ZnO thin film by molecular beam epitaxy

We report deep level transient spectroscopy results from ZnO layers grown on silicon by molecular beam epitaxy （MBE）, The hot probe measurements reveal mixed conductivity in the as-grown ZnO layers, and the current-voltage （l-V） measurements demonstrate a good quality p-type Schottky device. A new d...

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Bibliographic Details
Published inChinese physics B Vol. 23; no. 9; pp. 364 - 368
Main Authors Asghar, M., Mahmood, K., Hasan, M. A., Ferguson, I. T., Tsu, R., Willander, M.
Format Journal Article
LanguageEnglish
Published 01.09.2014
Subjects
Cross sections
Devices
Luminescence
Molecular beam epitaxy
Secondary ion mass spectroscopy
Silicon substrates
Thin films
Vacancies
Zinc oxide
ZnO膜
ZnO薄膜
分子束外延
拉曼光谱法
深能级瞬态谱
混合导电性
特性
生长
ZnO
secondary ion mass spectroscopy
photoluminescence
Raman spectroscopy
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Summary:We report deep level transient spectroscopy results from ZnO layers grown on silicon by molecular beam epitaxy （MBE）, The hot probe measurements reveal mixed conductivity in the as-grown ZnO layers, and the current-voltage （l-V） measurements demonstrate a good quality p-type Schottky device. A new deep acceptor level is observed in the ZnO layer having activation energy of 0.49 ± 0.03 eV and capture cross-section of 8,57 ×10^-18 cm^2. Based on the results from Raman spectroscopy, photoluminescence, and secondary ion mass spectroscopy （SIMS） of the ZnO layer, the observed acceptor trap level is tentatively attributed to a nitrogen-zinc vacancy complex in ZnO,
Bibliography:ZnO, secondary ion mass spectroscopy, photoluminescence, Raman spectroscopy
M. Asghar, K. Mahmood, M. A. Hasan, I. T. Ferguson, R. Tsu, M. WiUander（1.Department of Physics, The Islamia University of Bahawalpur, Bahawalpur, 63100, Pakistan; 2. Department of Electrical and Computer Engineering, University of North Carolina Charlotte, NC 28223, USA; 2. Department of Science and Technology, Link6ping University Norrkoping, Sweden）
We report deep level transient spectroscopy results from ZnO layers grown on silicon by molecular beam epitaxy （MBE）, The hot probe measurements reveal mixed conductivity in the as-grown ZnO layers, and the current-voltage （l-V） measurements demonstrate a good quality p-type Schottky device. A new deep acceptor level is observed in the ZnO layer having activation energy of 0.49 ± 0.03 eV and capture cross-section of 8,57 ×10^-18 cm^2. Based on the results from Raman spectroscopy, photoluminescence, and secondary ion mass spectroscopy （SIMS） of the ZnO layer, the observed acceptor trap level is tentatively attributed to a nitrogen-zinc vacancy complex in ZnO
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/23/9/097101