Effect of substrate doping on threshold voltages of buried channel pMOSFET based on strained-SiGe technology

• Published in: Journal of Central South University Vol. 21; no. 6; pp. 2292 - 2297
• Main Authors: Wang, Bin, Zhang, He-ming, Hu, Hui-yong, Zhang, Yu-ming, Zhou, Chun-yu, Li, Yu-chen
• Format: Journal Article
• Language: English
• Published: Heidelberg Central South University 01.06.2014
• Subjects: Engineering; Metallic Materials; plateau; strained SiGe; substrate doping; buried pMOSFET; threshold voltage; Ge fraction

The effect of substrate doping on the threshold voltages of buried channel pMOSFET based on strained-SiGe technology was studied. By physically deriving the models of the threshold voltages, it is found that the layer which inversely occurs first is substrate doping dependent, giving explanation for...