APA (7th ed.) Citation

Wang, B., Zhang, H., Hu, H., Zhang, Y., Zhou, C., & Li, Y. (2014). Effect of substrate doping on threshold voltages of buried channel pMOSFET based on strained-SiGe technology. Journal of Central South University, 21(6), 2292-2297. https://doi.org/10.1007/s11771-014-2180-4

Chicago Style (17th ed.) Citation

Wang, Bin, He-ming Zhang, Hui-yong Hu, Yu-ming Zhang, Chun-yu Zhou, and Yu-chen Li. "Effect of Substrate Doping on Threshold Voltages of Buried Channel PMOSFET Based on Strained-SiGe Technology." Journal of Central South University 21, no. 6 (2014): 2292-2297. https://doi.org/10.1007/s11771-014-2180-4.

MLA (9th ed.) Citation

Wang, Bin, et al. "Effect of Substrate Doping on Threshold Voltages of Buried Channel PMOSFET Based on Strained-SiGe Technology." Journal of Central South University, vol. 21, no. 6, 2014, pp. 2292-2297, https://doi.org/10.1007/s11771-014-2180-4.