The structural evolution of boron carbide via ab initio calculations

The distribution of boron and carbon atoms in boron carbide ( B 4 C ) , the third hardest naturally occurring material, is a hotly debated subject. In the current work, an ab initio approach is applied to the entire composition range of boron carbide ( ∼ 8 - 20 at. % C ) to determine what disorderin...

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Bibliographic Details
Published inApplied physics letters Vol. 91; no. 23; pp. 231915 - 231915-3
Main Authors Saal, James E., Shang, Shunli, Liu, Zi-Kui
Format Journal Article
LanguageEnglish
Published American Institute of Physics 03.12.2007
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ISSN0003-6951
1077-3118
DOI10.1063/1.2818661

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Summary:The distribution of boron and carbon atoms in boron carbide ( B 4 C ) , the third hardest naturally occurring material, is a hotly debated subject. In the current work, an ab initio approach is applied to the entire composition range of boron carbide ( ∼ 8 - 20 at. % C ) to determine what disordering mechanisms are responsible for such a large single-phase region. Based on the correctly predicted crystal structures, enthalpy of formation, and infrared phonon modes, we reveal direct evidence in support of a new defect model for boron carbide, where mixing occurs in the icosahedron for carbon-rich compositions and in the chain for boron-rich compositions.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2818661