Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications

• Published in: Journal of semiconductors Vol. 42; no. 3; pp. 31101 - 39
• Main Authors: Zhu, Ying, He, Yongli, Jiang, Shanshan, Zhu, Li, Chen, Chunsheng, Wan, Qing
• Format: Journal Article
• Language: English
• Published: School of Electronic Science & Engineering,Nanjing University,Nanjing 210023,China 01.03.2021
• Subjects: flexible electronics; flat panel displays; neuromorphic systems; sensors; indium-gallium-zinc-oxide; thin-film transistors

Since the invention of amorphous indium–gallium–zinc–oxide (IGZO) based thin-film transistors (TFTs) by Hideo Hosono in 2004, investigations on the topic of IGZO TFTs have been rapidly expanded thanks to their high electrical performance, large-area uniformity, and low processing temperature. This a...