Growth and transport properties of tin monosulphoselenide single crystals

• Published in: Journal of crystal growth Vol. 253; no. 1; pp. 52 - 58
• Main Authors: Patel, T.H, Vaidya, Rajiv, Patel, S.G
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.06.2003; Elsevier
• Subjects: A1. Optical absorption; A1. Structural characterization; A2. Single crystal growth; A3. Direct vapor transport; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conductivity of specific materials; Cross-disciplinary physics: materials science; rheology; Electronic transport in condensed matter; Exact sciences and technology; Growth from vapor; Materials science; Methods of crystal growth; physics of crystal growth; Other crystalline inorganic semiconductors; Physics; Ternary mixed IV–VI compounds; B2; Ternary mixed IV–VI compounds; 81.10.B; A1. Structural characterization; A2. Single crystal growth; A1. Optical absorption; A3. Direct vapor transport; 81.10.B A1. Optical absorption; Inorganic compounds; Selenides sulfides; Electrical conductivity; Hall mobility; Hall effect; Ternary mixed IV VI compounds; Crystal growth from vapors; XRD; Selenides; Experimental study; Lattice parameters; Tin Selenides sulfides; Sulfides; Monocrystals; IV-VI semiconductors; Solid solutions; A1. Structural characterization: A2. Single crystal growth; Chemical composition; Optical absorption

The binary and ternary mixed single crystals of the orthorhombic IV–VI family in the form of SnS x Se 1− x (where x=0, 0.25, 0.50, 0.75 and 1) were grown by direct vapor transport technique. The lattice parameters of each grown crystal were determined from the X-ray diffraction analysis. The grown c...