Work function alteration of the porous indium tin oxide nanorods film by electron beam irradiation technique
Material properties of transparent conductive oxide (TCO), such as crystallinity and work function, have been recognized as important factors affecting a performance of optoelectronic devices. In this work, a nuclear technique, electron beam irradiation, is proposed as a post deposition technique to...
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Published in | Radiation physics and chemistry (Oxford, England : 1993) Vol. 188; p. 109664 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
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Elsevier Ltd
01.11.2021
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Abstract | Material properties of transparent conductive oxide (TCO), such as crystallinity and work function, have been recognized as important factors affecting a performance of optoelectronic devices. In this work, a nuclear technique, electron beam irradiation, is proposed as a post deposition technique to alter the material characteristics of an indium tin oxide (ITO) nanorods film. The ITO film is fabricated by ion-assisted electron beam evaporation with glancing-angle deposition (GLAD) technique and subsequently irradiated by an electron beam with energy up to 20 MeV at the absorbed doses of 100 kGy and 300 kGy. The effect of irradiation, in terms of morphology and crystallinity, is studied by scanning electron microscopy (SEM), grazing incidence X-ray diffraction (GIXRD) and transmission electron microscopy (TEM). Whereas, the photoemission spectroscopy (PES) is carried out to study the surface composition and the work function of the ITO films. The SEM result indicates that the diameter of the ITO nanorods increases due to the electron beam irradiation. The electron beam induced crystallization of the ITO nanorod is observed and confirmed by both XRD and TEM measurements. Furthermore, the PES results reveal a change in the surface chemical composition and the work function of the ITO film after the electron beam irradiation. The results of this study implies that the electron beam irradiation serves as a promising post deposition treatment to improve the properties of ITO film, especially in terms of work function alteration.
•Porous ITO nanorods films was fabricated by EB evaporation with GLAD technique.•EB irradiation was used as a post deposition treatment to improve film properties.•EB induces a change in morphology, crystallinity, composition and work function.•An alteration in work function could be achieved via varying irradiation doses. |
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AbstractList | Material properties of transparent conductive oxide (TCO), such as crystallinity and work function, have been recognized as important factors affecting a performance of optoelectronic devices. In this work, a nuclear technique, electron beam irradiation, is proposed as a post deposition technique to alter the material characteristics of an indium tin oxide (ITO) nanorods film. The ITO film is fabricated by ion-assisted electron beam evaporation with glancing-angle deposition (GLAD) technique and subsequently irradiated by an electron beam with energy up to 20 MeV at the absorbed doses of 100 kGy and 300 kGy. The effect of irradiation, in terms of morphology and crystallinity, is studied by scanning electron microscopy (SEM), grazing incidence X-ray diffraction (GIXRD) and transmission electron microscopy (TEM). Whereas, the photoemission spectroscopy (PES) is carried out to study the surface composition and the work function of the ITO films. The SEM result indicates that the diameter of the ITO nanorods increases due to the electron beam irradiation. The electron beam induced crystallization of the ITO nanorod is observed and confirmed by both XRD and TEM measurements. Furthermore, the PES results reveal a change in the surface chemical composition and the work function of the ITO film after the electron beam irradiation. The results of this study implies that the electron beam irradiation serves as a promising post deposition treatment to improve the properties of ITO film, especially in terms of work function alteration. Material properties of transparent conductive oxide (TCO), such as crystallinity and work function, have been recognized as important factors affecting a performance of optoelectronic devices. In this work, a nuclear technique, electron beam irradiation, is proposed as a post deposition technique to alter the material characteristics of an indium tin oxide (ITO) nanorods film. The ITO film is fabricated by ion-assisted electron beam evaporation with glancing-angle deposition (GLAD) technique and subsequently irradiated by an electron beam with energy up to 20 MeV at the absorbed doses of 100 kGy and 300 kGy. The effect of irradiation, in terms of morphology and crystallinity, is studied by scanning electron microscopy (SEM), grazing incidence X-ray diffraction (GIXRD) and transmission electron microscopy (TEM). Whereas, the photoemission spectroscopy (PES) is carried out to study the surface composition and the work function of the ITO films. The SEM result indicates that the diameter of the ITO nanorods increases due to the electron beam irradiation. The electron beam induced crystallization of the ITO nanorod is observed and confirmed by both XRD and TEM measurements. Furthermore, the PES results reveal a change in the surface chemical composition and the work function of the ITO film after the electron beam irradiation. The results of this study implies that the electron beam irradiation serves as a promising post deposition treatment to improve the properties of ITO film, especially in terms of work function alteration. •Porous ITO nanorods films was fabricated by EB evaporation with GLAD technique.•EB irradiation was used as a post deposition treatment to improve film properties.•EB induces a change in morphology, crystallinity, composition and work function.•An alteration in work function could be achieved via varying irradiation doses. |
ArticleNumber | 109664 |
Author | Thamrongsiripak, Nuatawan Lertvanithphol, Tossaporn Seawsakul, Kittikhun Chia, Jia Yi Horprathum, Mati Nuntawong, Noppadon Chaikeeree, Tanapoj Nakajima, Hideki Songsiriritthigul, Prayoon |
Author_xml | – sequence: 1 givenname: Jia Yi surname: Chia fullname: Chia, Jia Yi email: jiayi.chia@nectec.or.th organization: National Electronics and Computer Technology, National Science and Technology Development Agency, Pathum Thani, 12120, Thailand – sequence: 2 givenname: Tossaporn surname: Lertvanithphol fullname: Lertvanithphol, Tossaporn organization: National Electronics and Computer Technology, National Science and Technology Development Agency, Pathum Thani, 12120, Thailand – sequence: 3 givenname: Tanapoj surname: Chaikeeree fullname: Chaikeeree, Tanapoj organization: National Electronics and Computer Technology, National Science and Technology Development Agency, Pathum Thani, 12120, Thailand – sequence: 4 givenname: Kittikhun surname: Seawsakul fullname: Seawsakul, Kittikhun organization: Research Network NANOTECH-SUT on Advanced Nanomaterials and Characterization, School of Physics, Suranaree University of Technology, Nakhon Ratchasima, 30000, Thailand – sequence: 5 givenname: Nuatawan surname: Thamrongsiripak fullname: Thamrongsiripak, Nuatawan organization: Development and Service Section, Irradiation Center, Thailand Institute of Nuclear Technology (Public Organization), Nakhon Nayok, 26120, Thailand – sequence: 6 givenname: Hideki orcidid: 0000-0001-9167-1288 surname: Nakajima fullname: Nakajima, Hideki organization: Synchrotron Light Research Institute, Muang, Nakhon Ratchasima, 30000, Thailand – sequence: 7 givenname: Prayoon surname: Songsiriritthigul fullname: Songsiriritthigul, Prayoon organization: Research Network NANOTECH-SUT on Advanced Nanomaterials and Characterization, School of Physics, Suranaree University of Technology, Nakhon Ratchasima, 30000, Thailand – sequence: 8 givenname: Mati surname: Horprathum fullname: Horprathum, Mati organization: National Electronics and Computer Technology, National Science and Technology Development Agency, Pathum Thani, 12120, Thailand – sequence: 9 givenname: Noppadon surname: Nuntawong fullname: Nuntawong, Noppadon organization: National Electronics and Computer Technology, National Science and Technology Development Agency, Pathum Thani, 12120, Thailand |
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SubjectTerms | Chemical composition Crystal structure Crystallinity Crystallization Deposition Diameters Electron beam irradiation Electron beams Electron irradiation GLAD Indium tin oxides ITO Material properties Morphology Nanorods Optoelectronic devices Photoelectric emission Scanning electron microscopy Transmission electron microscopy Work function Work functions |
Title | Work function alteration of the porous indium tin oxide nanorods film by electron beam irradiation technique |
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