Approaching the intrinsic photoluminescence linewidth in transition metal dichalcogenide monolayers
Excitonic states in monolayer transition metal dichalcogenides (TMDCs) have been the subject of extensive recent interest. Their intrinsic properties can, however, be obscured due to the influence of inhomogeneity in the external environment. Here we report methods for fabricating high quality TMDC...
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| Published in | 2d materials Vol. 4; no. 3; pp. 31011 - 31016 |
|---|---|
| Main Authors | , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
United States
IOP Publishing
24.07.2017
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| Abstract | Excitonic states in monolayer transition metal dichalcogenides (TMDCs) have been the subject of extensive recent interest. Their intrinsic properties can, however, be obscured due to the influence of inhomogeneity in the external environment. Here we report methods for fabricating high quality TMDC monolayers with narrow photoluminescence (PL) linewidth approaching the intrinsic limit. We find that encapsulation in hexagonal boron nitride (h-BN) sharply reduces the PL linewidth, and that passivation of the oxide substrate by an alkyl monolayer further decreases the linewidth and also minimizes the charged exciton (trion) peak. The combination of these sample preparation methods results in much reduced spatial variation in the PL emission, with a full-width-at-half-maximum as low as 1.7 meV. Analysis of the PL line shape yields a homogeneous width of 1.43 ± 0.08 meV and inhomogeneous broadening of 1.1 ± 0.3 meV. |
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| AbstractList | Excitonic states in monolayer transition metal dichalcogenides (TMDCs) have been the subject of extensive recent interest. Their intrinsic properties can, however, be obscured due to the influence of inhomogeneity in the external environment. Here we report methods for fabricating high quality TMDC monolayers with narrow photoluminescence (PL) linewidth approaching the intrinsic limit. We find that encapsulation in hexagonal boron nitride (h-BN) sharply reduces the PL linewidth, and that passivation of the oxide substrate by an alkyl monolayer further decreases the linewidth and also minimizes the charged exciton (trion) peak. The combination of these sample preparation methods results in much reduced spatial variation in the PL emission, with a full-width-at-half-maximum as low as 1.7 meV. Furthermore, analysis of the PL line shape yields a homogeneous width of 1.43 ± 0.08 meV and inhomogeneous broadening of 1.1 ± 0.3 meV. Excitonic states in monolayer transition metal dichalcogenides (TMDCs) have been the subject of extensive recent interest. Their intrinsic properties can, however, be obscured due to the influence of inhomogeneity in the external environment. Here we report methods for fabricating high quality TMDC monolayers with narrow photoluminescence (PL) linewidth approaching the intrinsic limit. We find that encapsulation in hexagonal boron nitride (h-BN) sharply reduces the PL linewidth, and that passivation of the oxide substrate by an alkyl monolayer further decreases the linewidth and also minimizes the charged exciton (trion) peak. The combination of these sample preparation methods results in much reduced spatial variation in the PL emission, with a full-width-at-half-maximum as low as 1.7 meV. Analysis of the PL line shape yields a homogeneous width of 1.43 ± 0.08 meV and inhomogeneous broadening of 1.1 ± 0.3 meV. |
| Author | Antony, Abhinandan Wang, Jue Heinz, Tony F Shepard, Gabriella D Taniguchi, Takeshi Ardelean, Jenny V Ajayi, Obafunso A Watanabe, Kenji Strauf, Stefan Zhu, X-Y Hone, James C |
| Author_xml | – sequence: 1 givenname: Obafunso A surname: Ajayi fullname: Ajayi, Obafunso A organization: Columbia University Department of Mechanical Engineering, New York, NY 10027, United States of America – sequence: 2 givenname: Jenny V surname: Ardelean fullname: Ardelean, Jenny V organization: Columbia University Department of Mechanical Engineering, New York, NY 10027, United States of America – sequence: 3 givenname: Gabriella D surname: Shepard fullname: Shepard, Gabriella D organization: Stevens Institute of Technology Department of Physics and Engineering Physics, Castle Point on the Hudson, Hoboken, NJ 07030, United States of America – sequence: 4 givenname: Jue surname: Wang fullname: Wang, Jue organization: Columbia University Department of Chemistry, New York, NY 10027, United States of America – sequence: 5 givenname: Abhinandan surname: Antony fullname: Antony, Abhinandan organization: Columbia University Department of Mechanical Engineering, New York, NY 10027, United States of America – sequence: 6 givenname: Takeshi surname: Taniguchi fullname: Taniguchi, Takeshi organization: National Institute for Materials Science , 1-1 Namiki, Tsukuba, Japan – sequence: 7 givenname: Kenji surname: Watanabe fullname: Watanabe, Kenji organization: National Institute for Materials Science , 1-1 Namiki, Tsukuba, Japan – sequence: 8 givenname: Tony F surname: Heinz fullname: Heinz, Tony F organization: SLAC National Accelerator Laboratory , Menlo Park, CA 94025, United States of America – sequence: 9 givenname: Stefan surname: Strauf fullname: Strauf, Stefan organization: Stevens Institute of Technology Department of Physics and Engineering Physics, Castle Point on the Hudson, Hoboken, NJ 07030, United States of America – sequence: 10 givenname: X-Y surname: Zhu fullname: Zhu, X-Y organization: Columbia University Department of Chemistry, New York, NY 10027, United States of America – sequence: 11 givenname: James C surname: Hone fullname: Hone, James C email: jh2228@columbia.edu organization: Author to whom any correspondence should be addressed |
| BackLink | https://www.osti.gov/servlets/purl/1374378$$D View this record in Osti.gov |
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| Snippet | Excitonic states in monolayer transition metal dichalcogenides (TMDCs) have been the subject of extensive recent interest. Their intrinsic properties can,... |
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| SubjectTerms | line width MATERIALS SCIENCE photoluminescence transition metal dichalcogenides |
| Title | Approaching the intrinsic photoluminescence linewidth in transition metal dichalcogenide monolayers |
| URI | https://iopscience.iop.org/article/10.1088/2053-1583/aa6aa1 https://www.osti.gov/servlets/purl/1374378 |
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