Deposition of CeO2/YSZ buffer layer on Hastelloy substrates for MOD process of YBa2Cu3O7−x film

• Published in: Physica. C, Superconductivity Vol. 357-360; pp. 1011 - 1014
• Main Authors: Fuji, Hiroshi, Honjo, Tetsuji, Nakamura, Yuichi, Izumi, Teruo, Takeshi, Araki, Hirabayashi, Izumi, Shiohara, Yuh, Iijima, Yasuhiro, Takeda, Kaoru
• Format: Journal Article
• Language: English
• Published: 01.08.2001
• DOI: 10.1016/S0921-4534(01)00495-6
• ISSN: 0921-4534

Trifluoroacetate metalorganic deposition (TFA-MOD) process is expected as a low cost process for mass production of coated conductors because it is a non-vacuum process. In order to apply the technique to fabrication of coated conductors, suitable buffer layers have to be considered to achieve a high orientation of superconducting layer and prevention of the reaction with metal substrate. The combination of CeO2 on IBAD-YSZ is considered as an effective buffer for TFA-MOD process expecting to satisfy a high acid resistivity and high crystal grain alignment. The CeO2 buffer layer was deposited on IBAD-YSZ/Hastelloy substrates by RF magnetron sputtering. From XRD analysis, the CeO2 buffer layer showed good in-plane alignment on YSZ-IBAD buffer layer. In a holding time of 1 h, the suitable maximum heat treatment temperature was from 750 to 775 C for TFA-Y123 on metal substrate. The Jc-B property of Y123 on CeO2/YSZ/Hastelloy shows the Jc values of 1.4 MA/cm2 at 77.3 K, 0 T and > 105 A/cm2 at 77.3 K, 2 T. High performance under high magnetic field was confirmed. 5 refs.