Lateral p - n Junction in Modulation Doped AlGaAs/GaAs

• Published in: Japanese Journal of Applied Physics Vol. 41; no. Part 1, No. 4B; pp. 2513 - 2515
• Main Authors: Kaestner, Bernd, Hasko, David G., Williams, David A.
• Format: Journal Article
• Language: English
• Published: 01.04.2002

Lateral p-n junctions have advantages for monolithic integration with other electronic devices and can improve the modulation bandwidth of light emitting devices. An alternative approach to existing fabrication methods is presented. Simulations show that recombination takes place inside the undoped...