Lateral p - n Junction in Modulation Doped AlGaAs/GaAs

Lateral p-n junctions have advantages for monolithic integration with other electronic devices and can improve the modulation bandwidth of light emitting devices. An alternative approach to existing fabrication methods is presented. Simulations show that recombination takes place inside the undoped...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 41; no. Part 1, No. 4B; pp. 2513 - 2515
Main Authors Kaestner, Bernd, Hasko, David G., Williams, David A.
Format Journal Article
LanguageEnglish
Published 01.04.2002
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Summary:Lateral p-n junctions have advantages for monolithic integration with other electronic devices and can improve the modulation bandwidth of light emitting devices. An alternative approach to existing fabrication methods is presented. Simulations show that recombination takes place inside the undoped channel and that the lateral position of the junction can be defined via etching. In order to demonstrate the concept, a simple device was fabricated and characterized. 11 refs.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.41.2513