Characterization of Dislocations in HgCdTe Heteroepitaxial Layers Using a New Substrate Removal Technique

• Published in: Journal of electronic materials Vol. 38; no. 8; pp. 1746 - 1754
• Main Authors: Lamarre, P., Fulk, C., D’Orsogna, D., Bellotti, E., Smith, F., LoVecchio, P., Reine, M. B., Parodos, T., Marciniec, J., Tobin, S. P., Markunas, J.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Boston Springer US 01.08.2009; Springer; Springer Nature B.V
• Subjects: Applied sciences; Characterization and Evaluation of Materials; Chemistry and Materials Science; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Defects and impurities in crystals; microstructure; Electronics; Electronics and Microelectronics; Exact sciences and technology; Instrumentation; Linear defects: dislocations, disclinations; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids); Materials Science; Mercury cadmium telluride epitaxy; Methods of deposition of films and coatings; film growth and epitaxy; Optical and Electronic Materials; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of bulk materials and thin films; Optoelectronic devices; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Semiconductor research; Solid State Physics; Structure of solids and liquids; crystallography; Transmission electron microscopy; HgCdTe; transmission electron microscopy; dislocations; defects; LPE; Misfit dislocations; Dislocation glide; Etching; Burgers vector; Defects; Thin films; Sample preparation; Etch pits; Optical properties; Cadmium tellurides; Molecular beam epitaxy; Stress effects; Mercury tellurides; Passivation; Crystal structure; Infrared detectors; Epitaxial layers; Electrical properties; Photodetectors; Slip planes; Monocrystals; Transmission electron microscopy; Threading dislocation; II-VI semiconductors; Heteroepitaxy; Ohmic contacts; Arrays

Dislocations are known to influence the electrical and optical properties of long-wavelength infrared (LWIR) HgCdTe detectors and have been shown to limit the performance of arrays fabricated on heteroepitaxial substrates. To help better understand dislocations in HgCdTe, a new method for preparing...