Metal oxide resistive memory with a deterministic conduction path - Lee, Sunghwan; Seo, Shem; Lim, Jinho; Jeon, Dasom; Alimkhanuly, Batyrbek; Kadyrov, Arman; Lee, Seunghyun (Journal of materials chemistry. C, Materials for optical and electronic devices, 2020)
Keywords: Antimony; Hafnium oxide; Mathematical analysis; Matrix algebra; Matrix methods; Metal oxides; Multiplication; Random access memory; Switching; Tellurium