Analytical model to evaluate threshold voltage of GaN based HEMT involving nanoscale material parameters

• Published in: Superlattices and microstructures Vol. 152; p. 106834
• Main Authors: Madhulika, Malik, A., Jain, N., Mishra, M., Kumar, S., Rawal, D.S., Singh, A.K.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.04.2021
• Subjects: Analytical model; Gallium nitride (GaN); High electron mobility transistors (HEMTs); Nanoscale parameters; Polarization; Threshold voltage; Two-dimensional electron gas (2-DEG); Analytical model; Polarization; Two-dimensional electron gas (2-DEG); High electron mobility transistors (HEMTs); Gallium nitride (GaN); Threshold voltage; Nanoscale parameters

In this paper, an improved analytical model involving nanoscale materials parameters for predicting threshold voltage of GaN HEMT is proposed. The proposed model for the first time incorporates the effect of structural miniaturization on nanoscale parameters such as bandgap, melting temperature, per...