The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes
The influence of high energy electron (HEE) irradiation from a Sr-90 radio-nuclide on n-type Ni/4H–SiC samples of doping density 7.1×1015cm−3 has been investigated over the temperature range 40–300K. Current–voltage (I–V), capacitance–voltage (C–V) and deep level transient spectroscopy (DLTS) were u...
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Published in | Materials science in semiconductor processing Vol. 39; pp. 112 - 118 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
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Elsevier Ltd
01.11.2015
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Abstract | The influence of high energy electron (HEE) irradiation from a Sr-90 radio-nuclide on n-type Ni/4H–SiC samples of doping density 7.1×1015cm−3 has been investigated over the temperature range 40–300K. Current–voltage (I–V), capacitance–voltage (C–V) and deep level transient spectroscopy (DLTS) were used to characterize the devices before and after irradiation at a fluence of 6×1014 electrons-cm−2. For both devices, the I–V characteristics were well described by thermionic emission (TE) in the temperature range 120–300K, but deviated from TE theory at temperature below 120K. The current flowing through the interface at a bias of 2.0V from pure thermionic emission to thermionic field emission within the depletion region with the free carrier concentrations of the devices decreased from 7.8×1015 to 6.8×1015 cm−3 after HEE irradiation. The modified Richardson constants were determined from the Gaussian distribution of the barrier height across the contact and found to be 133 and 163Acm−2K−2 for as-deposited and irradiated diodes, respectively. Three new defects with energies 0.22, 0.40 and 0.71eV appeared after HEE irradiation. Richardson constants were significantly less than the theoretical value which was ascribed to a small active device area. |
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AbstractList | The influence of high energy electron (HEE) irradiation from a Sr-90 radio-nuclide on n-type Ni/4H–SiC samples of doping density 7.1×1015cm−3 has been investigated over the temperature range 40–300K. Current–voltage (I–V), capacitance–voltage (C–V) and deep level transient spectroscopy (DLTS) were used to characterize the devices before and after irradiation at a fluence of 6×1014 electrons-cm−2. For both devices, the I–V characteristics were well described by thermionic emission (TE) in the temperature range 120–300K, but deviated from TE theory at temperature below 120K. The current flowing through the interface at a bias of 2.0V from pure thermionic emission to thermionic field emission within the depletion region with the free carrier concentrations of the devices decreased from 7.8×1015 to 6.8×1015 cm−3 after HEE irradiation. The modified Richardson constants were determined from the Gaussian distribution of the barrier height across the contact and found to be 133 and 163Acm−2K−2 for as-deposited and irradiated diodes, respectively. Three new defects with energies 0.22, 0.40 and 0.71eV appeared after HEE irradiation. Richardson constants were significantly less than the theoretical value which was ascribed to a small active device area. |
Author | Coelho, S.M.M. Janse van Rensburg, P.J. Omotoso, E. Meyer, W.E. Paradzah, A.T. Auret, F.D. Diale, M. |
Author_xml | – sequence: 1 givenname: E. surname: Omotoso fullname: Omotoso, E. email: ezekiel.omotoso@up.ac.za organization: Department of Physics, University of Pretoria, Private Bag X20, Hatfield 0028, South Africa – sequence: 2 givenname: W.E. surname: Meyer fullname: Meyer, W.E. organization: Department of Physics, University of Pretoria, Private Bag X20, Hatfield 0028, South Africa – sequence: 3 givenname: F.D. surname: Auret fullname: Auret, F.D. organization: Department of Physics, University of Pretoria, Private Bag X20, Hatfield 0028, South Africa – sequence: 4 givenname: A.T. surname: Paradzah fullname: Paradzah, A.T. organization: Department of Physics, University of Pretoria, Private Bag X20, Hatfield 0028, South Africa – sequence: 5 givenname: M. surname: Diale fullname: Diale, M. organization: Department of Physics, University of Pretoria, Private Bag X20, Hatfield 0028, South Africa – sequence: 6 givenname: S.M.M. surname: Coelho fullname: Coelho, S.M.M. organization: Department of Physics, University of Pretoria, Private Bag X20, Hatfield 0028, South Africa – sequence: 7 givenname: P.J. surname: Janse van Rensburg fullname: Janse van Rensburg, P.J. organization: Department of Physics, University of Pretoria, Private Bag X20, Hatfield 0028, South Africa |
BookMark | eNp9kNtKAzEURYNUsFZ_wKf8wEyTSeYGvkhRKxQFL88hk5zppLZJSaLQT_CvzVjBNyGQDcnanLPO0cQ6CwhdUZJTQqv5Jt-FsM8LQsuc8JwweoKmtKlZxklDJymzqs0aQugZOg9hQwgpC1pN0dfrANjYfvsBVgF2PR7MesBgwa8PGLagoncWG--lNjKalNOJCXpRg4vx_YA76b0BjwdIZMTS6p_3Z6MG6XVI35WzIUobx_pHM-fL7MUs_gq0cRrCBTrt5TbA5e89Q293t6-LZbZ6un9Y3KwyxTiPWVfrmvFGEyWrCjSDVulCUlnrqmPQ9XXTStYWjBRSKdWSpqxVBR1oXkJX9j2boeLYq7wLwUMv9t7spD8ISsQoU2zEKFOMMgXhIslM0PURgjTZZ9pWBGVGY9r4pEhoZ_7DvwFQs4Ma |
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ContentType | Journal Article |
Copyright | 2015 Elsevier Ltd |
Copyright_xml | – notice: 2015 Elsevier Ltd |
DBID | AAYXX CITATION |
DOI | 10.1016/j.mssp.2015.04.031 |
DatabaseName | CrossRef |
DatabaseTitle | CrossRef |
DatabaseTitleList | |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering |
EISSN | 1873-4081 |
EndPage | 118 |
ExternalDocumentID | 10_1016_j_mssp_2015_04_031 S1369800115002838 |
GroupedDBID | --K --M -~X .DC .~1 0R~ 1B1 1~. 1~5 29M 4.4 457 4G. 5GY 5VS 7-5 71M 8P~ AABXZ AACTN AAEDT AAEDW AAEPC AAIAV AAIKJ AAKOC AALRI AAOAW AAQFI AAQXK AAXUO ABFRF ABJNI ABMAC ABXDB ABXRA ABYKQ ACBEA ACDAQ ACGFO ACGFS ACNNM ACRLP ADBBV ADEZE ADMUD ADTZH AEBSH AECPX AEFWE AEKER AENEX AEZYN AFFNX AFKWA AFRZQ AFTJW AGHFR AGUBO AGYEJ AHJVU AIEXJ AIKHN AITUG AJBFU AJOXV ALMA_UNASSIGNED_HOLDINGS AMFUW AMRAJ ASPBG AVWKF AXJTR AZFZN BJAXD BKOJK BLXMC CS3 DU5 EBS EFJIC EFLBG EJD EO8 EO9 EP2 EP3 FDB FEDTE FGOYB FIRID FNPLU FYGXN G-Q GBLVA HVGLF HZ~ IHE J1W JJJVA KOM M41 MAGPM MO0 N9A O-L O9- OAUVE OZT P-8 P-9 P2P PC. Q38 R2- RIG ROL RPZ SDF SDG SDP SES SEW SPC SPCBC SSM SST SSZ T5K UNMZH XFK XPP ZMT ~G- AAXKI AAYXX AFJKZ AKRWK CITATION |
ID | FETCH-LOGICAL-c344t-b7d7348d0ca66ed3e9cd2a1a7d6b3ebf789a392302accc90857c6ebed45eb5ff3 |
IEDL.DBID | AIKHN |
ISSN | 1369-8001 |
IngestDate | Thu Sep 26 19:01:58 EDT 2024 Fri Feb 23 02:19:14 EST 2024 |
IsDoiOpenAccess | false |
IsOpenAccess | true |
IsPeerReviewed | true |
IsScholarly | true |
Keywords | Silicon carbide Richardson constant Schottky barrier height High energy electron irradiation |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-LOGICAL-c344t-b7d7348d0ca66ed3e9cd2a1a7d6b3ebf789a392302accc90857c6ebed45eb5ff3 |
OpenAccessLink | https://repository.up.ac.za/bitstream/2263/50010/1/Omotoso_Influence_2015.pdf |
PageCount | 7 |
ParticipantIDs | crossref_primary_10_1016_j_mssp_2015_04_031 elsevier_sciencedirect_doi_10_1016_j_mssp_2015_04_031 |
PublicationCentury | 2000 |
PublicationDate | 2015-11-01 |
PublicationDateYYYYMMDD | 2015-11-01 |
PublicationDate_xml | – month: 11 year: 2015 text: 2015-11-01 day: 01 |
PublicationDecade | 2010 |
PublicationTitle | Materials science in semiconductor processing |
PublicationYear | 2015 |
Publisher | Elsevier Ltd |
Publisher_xml | – name: Elsevier Ltd |
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SSID | ssj0005216 |
Score | 2.3494039 |
Snippet | The influence of high energy electron (HEE) irradiation from a Sr-90 radio-nuclide on n-type Ni/4H–SiC samples of doping density 7.1×1015cm−3 has been... |
SourceID | crossref elsevier |
SourceType | Aggregation Database Publisher |
StartPage | 112 |
SubjectTerms | High energy electron irradiation Richardson constant Schottky barrier height Silicon carbide |
Title | The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes |
URI | https://dx.doi.org/10.1016/j.mssp.2015.04.031 |
Volume | 39 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1LT9tAEB6RcKEHVNqiAm20h96qbbze9WOPKCIKROQARc3N2qcwiAQl5sCl9_5rdvygQUIckCxZfszKmm8188ma-QbgR6xDFjRC0tx4QUXsI6q5l5SlOvY-4lLUYjrns3RyJc7myXwLRl0vDJZVtrG_iel1tG7vDFtvDu_LcnjJeCrzhtJgksx7sB3SkRB92D4-nU5mG5Ue9QRUfJ-iQds705R53a3XKFvJklrxlLPX89NGzhl_hN2WLJLj5nv2YMstPsGHDQnBz_Av4EzKbtIIWXqCAsTE1S19pBtyQ8rVCkUIEAUSjsD6COpvVtXtI9FqhWPryHX9l5Soha2fXzx3ZBHTkMgKl5-VQzGhl-Xo_wK2XFq3_gJX45PfowltxytQw4WoqM4sStvYyKg0dZY7aWysmMpsqrnTPsulCuyJR7EyxkiUwjdpwNyKxOnEe74P_cVy4b4CyXNmrGKZiy0XNmdKB2Jhc2cSK2Wm9AH87Jxa3DcqGkVXXnZTIAQFQlBEoggQHEDS-b14sReKEObfsDt8p90R7OBV02H4DfrV6sF9D1Sj0gPo_frLBu2GwvP04s_0CaJS15A |
link.rule.ids | 315,786,790,4521,24144,27955,27956,45618,45712 |
linkProvider | Elsevier |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV25TgMxELU4CqBAnOLGBR0y2V17D5coIgpXCpJIdJZPsSASlCwFDT1_jWcPCBKiQNrKl1bzrJkna-YNQieR8lFQM04y7RhhkQuIoo6TMFGRcwHlrBTTue0l3SG7uo_v51C7qYWBtMra91c-vfTW9UirtmbrJc9b_ZAmPKsoDQTJbB4tAhuAvK6z99k8j7L_KawmsLyunKmSvJ6nUxCtDONS75SGv0enmYjTWUOrNVXE59XfrKM5O9pAKzMCgpvow6OM86bPCB47DPLD2JYFfbhpcYPzyQQkCAAD7D_P-TCobxbF0xtWcgJN6_BD-UaK5ciU83df9VhYVxSygON7eYt1ST9vfx9g8rGx0y007FwM2l1SN1cgmjJWEJUaELYxgZZJYg21XJtIhjI1iaJWuTTj0nMnGkRSa81BCF8nHnHDYqti5-g2WhiNR3YH4SwLtZFhaiNDmclCqTytMJnVseE8lWoXnTZGFS-VhoZoksseBUAgAAIRMOEh2EVxY3fx4yYI7-T_2Lf3z33HaKk7uL0RN5e96320DDNVreEBWigmr_bQk45CHZWX6hPVwNbC |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=The+influence+of+high+energy+electron+irradiation+on+the+Schottky+barrier+height+and+the+Richardson+constant+of+Ni%2F4H-SiC+Schottky+diodes&rft.jtitle=Materials+science+in+semiconductor+processing&rft.au=Omotoso%2C+E.&rft.au=Meyer%2C+W.E.&rft.au=Auret%2C+F.D.&rft.au=Paradzah%2C+A.T.&rft.date=2015-11-01&rft.pub=Elsevier+Ltd&rft.issn=1369-8001&rft.eissn=1873-4081&rft.volume=39&rft.spage=112&rft.epage=118&rft_id=info:doi/10.1016%2Fj.mssp.2015.04.031&rft.externalDocID=S1369800115002838 |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1369-8001&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1369-8001&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1369-8001&client=summon |