The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes
The influence of high energy electron (HEE) irradiation from a Sr-90 radio-nuclide on n-type Ni/4H–SiC samples of doping density 7.1×1015cm−3 has been investigated over the temperature range 40–300K. Current–voltage (I–V), capacitance–voltage (C–V) and deep level transient spectroscopy (DLTS) were u...
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| Published in | Materials science in semiconductor processing Vol. 39; pp. 112 - 118 |
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| Main Authors | , , , , , , |
| Format | Journal Article |
| Language | English |
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Elsevier Ltd
01.11.2015
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| Abstract | The influence of high energy electron (HEE) irradiation from a Sr-90 radio-nuclide on n-type Ni/4H–SiC samples of doping density 7.1×1015cm−3 has been investigated over the temperature range 40–300K. Current–voltage (I–V), capacitance–voltage (C–V) and deep level transient spectroscopy (DLTS) were used to characterize the devices before and after irradiation at a fluence of 6×1014 electrons-cm−2. For both devices, the I–V characteristics were well described by thermionic emission (TE) in the temperature range 120–300K, but deviated from TE theory at temperature below 120K. The current flowing through the interface at a bias of 2.0V from pure thermionic emission to thermionic field emission within the depletion region with the free carrier concentrations of the devices decreased from 7.8×1015 to 6.8×1015 cm−3 after HEE irradiation. The modified Richardson constants were determined from the Gaussian distribution of the barrier height across the contact and found to be 133 and 163Acm−2K−2 for as-deposited and irradiated diodes, respectively. Three new defects with energies 0.22, 0.40 and 0.71eV appeared after HEE irradiation. Richardson constants were significantly less than the theoretical value which was ascribed to a small active device area. |
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| AbstractList | The influence of high energy electron (HEE) irradiation from a Sr-90 radio-nuclide on n-type Ni/4H–SiC samples of doping density 7.1×1015cm−3 has been investigated over the temperature range 40–300K. Current–voltage (I–V), capacitance–voltage (C–V) and deep level transient spectroscopy (DLTS) were used to characterize the devices before and after irradiation at a fluence of 6×1014 electrons-cm−2. For both devices, the I–V characteristics were well described by thermionic emission (TE) in the temperature range 120–300K, but deviated from TE theory at temperature below 120K. The current flowing through the interface at a bias of 2.0V from pure thermionic emission to thermionic field emission within the depletion region with the free carrier concentrations of the devices decreased from 7.8×1015 to 6.8×1015 cm−3 after HEE irradiation. The modified Richardson constants were determined from the Gaussian distribution of the barrier height across the contact and found to be 133 and 163Acm−2K−2 for as-deposited and irradiated diodes, respectively. Three new defects with energies 0.22, 0.40 and 0.71eV appeared after HEE irradiation. Richardson constants were significantly less than the theoretical value which was ascribed to a small active device area. |
| Author | Coelho, S.M.M. Janse van Rensburg, P.J. Omotoso, E. Meyer, W.E. Paradzah, A.T. Auret, F.D. Diale, M. |
| Author_xml | – sequence: 1 givenname: E. surname: Omotoso fullname: Omotoso, E. email: ezekiel.omotoso@up.ac.za organization: Department of Physics, University of Pretoria, Private Bag X20, Hatfield 0028, South Africa – sequence: 2 givenname: W.E. surname: Meyer fullname: Meyer, W.E. organization: Department of Physics, University of Pretoria, Private Bag X20, Hatfield 0028, South Africa – sequence: 3 givenname: F.D. surname: Auret fullname: Auret, F.D. organization: Department of Physics, University of Pretoria, Private Bag X20, Hatfield 0028, South Africa – sequence: 4 givenname: A.T. surname: Paradzah fullname: Paradzah, A.T. organization: Department of Physics, University of Pretoria, Private Bag X20, Hatfield 0028, South Africa – sequence: 5 givenname: M. surname: Diale fullname: Diale, M. organization: Department of Physics, University of Pretoria, Private Bag X20, Hatfield 0028, South Africa – sequence: 6 givenname: S.M.M. surname: Coelho fullname: Coelho, S.M.M. organization: Department of Physics, University of Pretoria, Private Bag X20, Hatfield 0028, South Africa – sequence: 7 givenname: P.J. surname: Janse van Rensburg fullname: Janse van Rensburg, P.J. organization: Department of Physics, University of Pretoria, Private Bag X20, Hatfield 0028, South Africa |
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| Cites_doi | 10.1016/j.nimb.2009.12.019 10.1063/1.4893970 10.1016/S0038-1098(99)00404-4 10.1088/0268-1242/21/3/016 10.1088/0268-1242/19/1/014 10.1016/0038-1101(86)90145-0 10.1063/1.2769284 10.1016/j.mee.2008.09.045 10.1016/j.nima.2005.03.038 10.1016/j.apsusc.2005.01.009 10.1116/1.4884756 10.1063/1.1787138 10.1063/1.1928328 10.1016/j.physb.2004.12.003 10.1016/j.apsusc.2005.09.046 10.1063/1.4816158 10.1109/55.790735 10.1063/1.4842096 10.1063/1.1841476 10.1016/j.spmi.2010.06.019 10.1016/j.sna.2012.07.021 10.1016/0038-1101(95)00162-X 10.1109/JSSC.1974.1050512 10.1063/1.1415050 10.1016/j.apsusc.2005.05.008 10.1063/1.1477256 10.1063/1.353249 10.1007/s10967-011-1041-y 10.1063/1.1424054 10.1063/1.347243 10.1016/j.nimb.2008.10.087 10.1016/j.jallcom.2010.07.019 10.1016/j.physb.2014.08.031 10.1002/div.3709 10.1016/j.jallcom.2009.05.141 10.1016/S0921-5107(96)01981-2 10.1109/TIA.2003.813730 10.1016/0038-1101(69)90117-8 10.1088/1674-1056/18/5/034 10.1016/0038-1101(77)90180-0 10.1088/0268-1242/21/12/026 10.1063/1.354399 10.1016/j.mee.2008.10.015 10.1016/S0038-1101(99)00268-3 10.1016/j.spmi.2014.09.035 10.1016/j.sna.2013.02.018 10.1063/1.327715 10.1016/S0038-1101(00)00230-6 10.1134/S1063782608020231 10.1063/1.93101 10.1002/pssa.201127559 |
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| References | Janardhanam, Ashok Kumar, Rajagopal Reddy, Reddy (bib6) 2009; 485 Grant, Cunningham, Blue, O׳Shea, Vaitkus, Gaubas, Rahman (bib18) 2005; 546 Ouennoughi, Toumi, Weiss (bib34) 2015; 456 Elasser, Kheraluwala, Ghezzo, Steigerwald, Evers, Kretchmer, Chow (bib2) 2003; 39 Subhash (bib13) 2004; 19 Gümüş, Türüt, Yalçin (bib11) 2002; 91 Alialy, Altındal, Tanrıkulu, Yıldız (bib36) 2014; 116 Soylu, Yakuphanoglu (bib42) 2010; 506 Song, Van Meirhaeghe, Laflère, Cardon (bib14) 1986; 29 Crowell, Rideout (bib40) 1969; 12 Özdemir, Turut, Kökçe (bib4) 2006; 21 Hökelek, Robinson (bib39) 1982; 40 Huang, Qin, Li, Wang (bib46) 2013; 103 Soylu, Abay (bib41) 2009; 86 McCafferty, Sellai, Dawson, Elabd (bib15) 1996; 39 Song, Van Meirhaeghe, Laflère, Cardon (bib56) 1986; 29 Takayuki, Tsuneo, Seizo, Yoshihiko (bib3) 1980; 19 Zeyrek, Bulbul, Altindal, Baykul, Yuzer (bib7) 2008; 38 Sze, Ng (bib32) 2006 Toumi, Ferhat-Hamida, Boussouar, Sellai, Ouennoughi, Ryssel (bib47) 2009; 86 Zeyrek, Altındal, Yüzer, Bülbül (bib54) 2006; 252 Coskun, Gedik, Balcı (bib43) 2006; 21 Gammon, Pérez-Tomás, Shah, Vavasour, Donchev, Pang, Myronov, Fisher, Jennings, Leadley, Mawby (bib55) 2013; 114 Marinova, Kakanakova-Georgieva, Krastev, Kakanakov, Neshev, Kassamakova, Noblanc, Arnodo, Cassette, Brylinski, Pecz, Radnoczi, Vincze (bib25) 1997; 46 Zhu, Van Meirhaeghe, Detavernier, Cardon, Ru, Qu, Li (bib10) 2000; 44 Werner, Güttler (bib51) 1993; 73 Roccaforte, Bongiorno, La Via, Raineri (bib60) 2004; 85 Kumar, Maan, Akhtar (bib20) 2014; 32 Çınar, Coşkun, Gür, Aydoğan (bib23) 2009; 267 Roccaforte, La Via, Baeri, Raineri, Calcagno, Mangano (bib50) 2004; 96 Chand, Bala (bib57) 2005; 252 Auret, Goodman, Myburg, Barnard, Jones (bib26) 1993; 74 Hudait, Venkateswarlu, Krupanidhi (bib52) 2001; 45 Auret, Goodman, Hayes, Legodi, Van Laarhoven, Look (bib30) 2001; 79 Crowell (bib44) 1977; 20 Aydın, Yıldırım, Türüt (bib33) 2007; 102 Dökme, Altindal, Bülbül (bib8) 2006; 252 Lin, Yi-Men, Yu-Ming, Chao, Yong-Ji (bib38) 2009; 18 Shankar Naik, Reddy (bib37) 2010; 48 Werner, Güttler (bib12) 1991; 69 E. Omotoso, W.E. Meyer, F.D. Auret, A.P. Paradzah, M. Diale, S.M.M. Coelho, P.J. Janse Van Rensberg, Nucl. Instr. Meth. Phys. Res. B, submitted for publication, 2015 D.K. Schroder, A John Willey & Sons, inc., 3rd ed. 2006. Çınar, Coşkun, Aydoğan, Asıl, Gür (bib22) 2010; 268 Roccaforte, Libertino, Giannazzo, Bongiorno, La Via, Raineri (bib28) 2005; 97 E. Rhoderick, R. Williams, Oxford Science, Oxford, 1988. Kazukauskas, Vaitkus (bib17) 2004; 12 Akbay, Korkut, Ejderha, Korkut, Türüt (bib21) 2011; 289 Kozlovskiĭ, Emtsev, Emtsev, Strokan, Ivanov, Lomasov, Oganesyan, Lebedev (bib61) 2008; 42 M.C. Driver, R.H. Hopkins, C.D. Brandt, D.L. Barrett, A.A. Burk, R.C. Clarke, G.W. Eldridge, H.M. Hobgood, J.P. McHugh, P.G. McMullin, R.R. Siergiej, S. Sriram, Gallium Arsenide Integrated Circuit (GaAs IC), in: Proceedings of the 15th Annual Symposium on Technical Digest, 1993, pp. 19–21. Gülnahar (bib35) 2014; 76 Tolbert, Ozpineci, Islam, Chinthavali (bib16) 2003; 1 Raynaud, Isoird, Lazar, Johnson, Wright (bib29) 2002; 91 Ashok, Borrego, Gutmann (bib27) 1980; 51 Tecimer, Aksu, Uslu, Atasoy, Bacaksız, Altındal (bib59) 2012; 185 Itoh, Kimoto, Matsunami (bib49) 1995; 16 Ciechonski (bib45) 2005 Zhu, Van Meirhaeghe, Detavernier, Ru, Li, Cardon (bib53) 1999; 112 Benkovska, Stuchlikova, Buc, Čaplovic (bib24) 2012; 209 Karataş, Altindal, Çakar (bib9) 2005; 357 Van Tuyl, Liechti (bib1) 1974; 9 Özavcı, Demirezen, Aydemir, Altındal (bib58) 2013; 194 Subhash (10.1016/j.mssp.2015.04.031_bib13) 2004; 19 Akbay (10.1016/j.mssp.2015.04.031_bib21) 2011; 289 Crowell (10.1016/j.mssp.2015.04.031_bib44) 1977; 20 Toumi (10.1016/j.mssp.2015.04.031_bib47) 2009; 86 Marinova (10.1016/j.mssp.2015.04.031_bib25) 1997; 46 Zeyrek (10.1016/j.mssp.2015.04.031_bib54) 2006; 252 Gammon (10.1016/j.mssp.2015.04.031_bib55) 2013; 114 10.1016/j.mssp.2015.04.031_bib31 Tecimer (10.1016/j.mssp.2015.04.031_bib59) 2012; 185 Roccaforte (10.1016/j.mssp.2015.04.031_bib60) 2004; 85 Coskun (10.1016/j.mssp.2015.04.031_bib43) 2006; 21 10.1016/j.mssp.2015.04.031_bib5 Janardhanam (10.1016/j.mssp.2015.04.031_bib6) 2009; 485 Roccaforte (10.1016/j.mssp.2015.04.031_bib50) 2004; 96 Raynaud (10.1016/j.mssp.2015.04.031_bib29) 2002; 91 Benkovska (10.1016/j.mssp.2015.04.031_bib24) 2012; 209 Auret (10.1016/j.mssp.2015.04.031_bib26) 1993; 74 Karataş (10.1016/j.mssp.2015.04.031_bib9) 2005; 357 Dökme (10.1016/j.mssp.2015.04.031_bib8) 2006; 252 Özavcı (10.1016/j.mssp.2015.04.031_bib58) 2013; 194 Soylu (10.1016/j.mssp.2015.04.031_bib42) 2010; 506 10.1016/j.mssp.2015.04.031_bib19 Shankar Naik (10.1016/j.mssp.2015.04.031_bib37) 2010; 48 Gülnahar (10.1016/j.mssp.2015.04.031_bib35) 2014; 76 Crowell (10.1016/j.mssp.2015.04.031_bib40) 1969; 12 McCafferty (10.1016/j.mssp.2015.04.031_bib15) 1996; 39 Werner (10.1016/j.mssp.2015.04.031_bib51) 1993; 73 Ashok (10.1016/j.mssp.2015.04.031_bib27) 1980; 51 Özdemir (10.1016/j.mssp.2015.04.031_bib4) 2006; 21 Soylu (10.1016/j.mssp.2015.04.031_bib41) 2009; 86 Ciechonski (10.1016/j.mssp.2015.04.031_bib45) 2005 Grant (10.1016/j.mssp.2015.04.031_bib18) 2005; 546 Aydın (10.1016/j.mssp.2015.04.031_bib33) 2007; 102 Itoh (10.1016/j.mssp.2015.04.031_bib49) 1995; 16 Hökelek (10.1016/j.mssp.2015.04.031_bib39) 1982; 40 Kazukauskas (10.1016/j.mssp.2015.04.031_bib17) 2004; 12 Hudait (10.1016/j.mssp.2015.04.031_bib52) 2001; 45 Chand (10.1016/j.mssp.2015.04.031_bib57) 2005; 252 Zeyrek (10.1016/j.mssp.2015.04.031_bib7) 2008; 38 10.1016/j.mssp.2015.04.031_bib48 Çınar (10.1016/j.mssp.2015.04.031_bib23) 2009; 267 Van Tuyl (10.1016/j.mssp.2015.04.031_bib1) 1974; 9 Kumar (10.1016/j.mssp.2015.04.031_bib20) 2014; 32 Sze (10.1016/j.mssp.2015.04.031_bib32) 2006 Lin (10.1016/j.mssp.2015.04.031_bib38) 2009; 18 Ouennoughi (10.1016/j.mssp.2015.04.031_bib34) 2015; 456 Kozlovskiĭ (10.1016/j.mssp.2015.04.031_bib61) 2008; 42 Auret (10.1016/j.mssp.2015.04.031_bib30) 2001; 79 Takayuki (10.1016/j.mssp.2015.04.031_bib3) 1980; 19 Çınar (10.1016/j.mssp.2015.04.031_bib22) 2010; 268 Tolbert (10.1016/j.mssp.2015.04.031_bib16) 2003; 1 Zhu (10.1016/j.mssp.2015.04.031_bib10) 2000; 44 Roccaforte (10.1016/j.mssp.2015.04.031_bib28) 2005; 97 Alialy (10.1016/j.mssp.2015.04.031_bib36) 2014; 116 Song (10.1016/j.mssp.2015.04.031_bib14) 1986; 29 Huang (10.1016/j.mssp.2015.04.031_bib46) 2013; 103 Elasser (10.1016/j.mssp.2015.04.031_bib2) 2003; 39 Zhu (10.1016/j.mssp.2015.04.031_bib53) 1999; 112 Song (10.1016/j.mssp.2015.04.031_bib56) 1986; 29 Werner (10.1016/j.mssp.2015.04.031_bib12) 1991; 69 Gümüş (10.1016/j.mssp.2015.04.031_bib11) 2002; 91 |
| References_xml | – volume: 546 start-page: 213 year: 2005 end-page: 217 ident: bib18 publication-title: Nucl. Instrum. Methods Phys. Res. A: Accel. Spectrom. Detect. Assoc. Equip. contributor: fullname: Rahman – volume: 268 start-page: 616 year: 2010 end-page: 621 ident: bib22 publication-title: Nucl. Instrum. Methods Phys. Res. B: Beam Interact. Mater. Atoms contributor: fullname: Gür – volume: 40 start-page: 426 year: 1982 end-page: 428 ident: bib39 publication-title: Appl. Phys. Lett. contributor: fullname: Robinson – volume: 16 start-page: 280 year: 1995 end-page: 282 ident: bib49 publication-title: Electron Device Lett. IEEE contributor: fullname: Matsunami – volume: 252 start-page: 358 year: 2005 end-page: 363 ident: bib57 publication-title: Appl. Surf. Sci. contributor: fullname: Bala – volume: 252 start-page: 7749 year: 2006 end-page: 7754 ident: bib8 publication-title: Appl. Surf. Sci. contributor: fullname: Bülbül – volume: 506 start-page: 418 year: 2010 end-page: 422 ident: bib42 publication-title: J. Alloy. Compd. contributor: fullname: Yakuphanoglu – volume: 97 year: 2005 ident: bib28 publication-title: J. Appl. Phys. contributor: fullname: Raineri – year: 2006 ident: bib32 article-title: Physics of Semiconductor Devices contributor: fullname: Ng – volume: 42 start-page: 242 year: 2008 end-page: 247 ident: bib61 publication-title: Semiconductors contributor: fullname: Lebedev – volume: 194 start-page: 259 year: 2013 end-page: 268 ident: bib58 publication-title: Sens. Actuat. A: Phys. contributor: fullname: Altındal – volume: 39 start-page: 915 year: 2003 end-page: 921 ident: bib2 publication-title: IEEE Trans. Ind. Appl. contributor: fullname: Chow – volume: 51 start-page: 1076 year: 1980 end-page: 1084 ident: bib27 publication-title: J. Appl. Phys. contributor: fullname: Gutmann – volume: 456 start-page: 176 year: 2015 end-page: 181 ident: bib34 publication-title: Phys. B: Condens. Matter contributor: fullname: Weiss – volume: 46 start-page: 223 year: 1997 end-page: 226 ident: bib25 publication-title: Mater. Sci. Eng.: B contributor: fullname: Vincze – volume: 357 start-page: 386 year: 2005 end-page: 397 ident: bib9 publication-title: Phys. B: Condens. Matter contributor: fullname: Çakar – volume: 114 start-page: 223704 year: 2013 ident: bib55 publication-title: J. Appl. Phys. contributor: fullname: Mawby – volume: 32 start-page: 041203 year: 2014 ident: bib20 publication-title: J. Vac. Sci. amp; Technol. B contributor: fullname: Akhtar – volume: 103 start-page: 033520 year: 2013 ident: bib46 publication-title: Appl. Phys. Lett. contributor: fullname: Wang – volume: 116 start-page: 083709 year: 2014 ident: bib36 publication-title: J. Appl. Phys. contributor: fullname: Yıldız – volume: 86 start-page: 88 year: 2009 end-page: 95 ident: bib41 publication-title: Microelectron. Eng. contributor: fullname: Abay – volume: 45 start-page: 133 year: 2001 end-page: 141 ident: bib52 publication-title: Solid-State Electron. contributor: fullname: Krupanidhi – volume: 289 start-page: 145 year: 2011 end-page: 148 ident: bib21 publication-title: J. Radioanal. Nucl. Chem. contributor: fullname: Türüt – volume: 112 start-page: 611 year: 1999 end-page: 615 ident: bib53 publication-title: Solid State Commun. contributor: fullname: Cardon – volume: 20 start-page: 171 year: 1977 end-page: 175 ident: bib44 publication-title: Solid-State Electron. contributor: fullname: Crowell – volume: 267 start-page: 87 year: 2009 end-page: 90 ident: bib23 publication-title: Nucl. Instrum. Methods Phys. Res. B: Beam Interact. Mater. Atoms contributor: fullname: Aydoğan – volume: 44 start-page: 663 year: 2000 end-page: 671 ident: bib10 publication-title: Solid-State Electron. contributor: fullname: Li – volume: 74 start-page: 4339 year: 1993 end-page: 4342 ident: bib26 publication-title: J. Appl. Phys. contributor: fullname: Jones – volume: 1 start-page: 317 year: 2003 end-page: 321 ident: bib16 publication-title: Power and Energy Syst. Proc. contributor: fullname: Chinthavali – volume: 252 start-page: 2999 year: 2006 end-page: 3010 ident: bib54 publication-title: Appl. Surf. Sci. contributor: fullname: Bülbül – volume: 19 start-page: 82 year: 2004 ident: bib13 publication-title: Semicond. Sci. Technol. contributor: fullname: Subhash – volume: 12 start-page: 89 year: 1969 end-page: 105 ident: bib40 publication-title: Solid-State Electron. contributor: fullname: Rideout – volume: 9 start-page: 269 year: 1974 end-page: 276 ident: bib1 publication-title: IEEE J. Solid-State Circuits contributor: fullname: Liechti – volume: 19 start-page: 459 year: 1980 ident: bib3 publication-title: Jpn J.Appl. Physics contributor: fullname: Yoshihiko – volume: 485 start-page: 467 year: 2009 end-page: 472 ident: bib6 publication-title: J. Alloy. Compd. contributor: fullname: Reddy – volume: 73 start-page: 1315 year: 1993 end-page: 1319 ident: bib51 publication-title: J. Appl. Phys. contributor: fullname: Güttler – volume: 69 start-page: 1522 year: 1991 end-page: 1533 ident: bib12 publication-title: J. Appl. Phys. contributor: fullname: Güttler – volume: 29 start-page: 633 year: 1986 end-page: 638 ident: bib14 publication-title: Solid State Electron. contributor: fullname: Cardon – volume: 38 start-page: 591 year: 2008 end-page: 597 ident: bib7 publication-title: Braz. J. Phys. contributor: fullname: Yuzer – year: 2005 ident: bib45 article-title: Device Characteristics of Sublimation Grown 44H–SiCLayers contributor: fullname: Ciechonski – volume: 21 start-page: 298 year: 2006 ident: bib4 publication-title: Semicond. Sci. Technol. contributor: fullname: Kökçe – volume: 185 start-page: 73 year: 2012 end-page: 81 ident: bib59 publication-title: Sens. Actuat. A: Phys. contributor: fullname: Altındal – volume: 12 start-page: 377 year: 2004 end-page: 382 ident: bib17 publication-title: Opto-Electron. Rev. contributor: fullname: Vaitkus – volume: 86 start-page: 303 year: 2009 end-page: 309 ident: bib47 publication-title: Microelectron. Eng. contributor: fullname: Ryssel – volume: 76 start-page: 394 year: 2014 end-page: 412 ident: bib35 publication-title: Superlattices Microstruct. contributor: fullname: Gülnahar – volume: 29 start-page: 633 year: 1986 end-page: 638 ident: bib56 publication-title: Solid-State Electron. contributor: fullname: Cardon – volume: 96 start-page: 4313 year: 2004 end-page: 4318 ident: bib50 publication-title: J. Appl. Phys. contributor: fullname: Mangano – volume: 91 start-page: 245 year: 2002 end-page: 250 ident: bib11 publication-title: J. Appl. Phys. contributor: fullname: Yalçin – volume: 209 start-page: 1384 year: 2012 end-page: 1389 ident: bib24 publication-title: Phys. Status Solidi (a) contributor: fullname: Čaplovic – volume: 85 start-page: 6152 year: 2004 ident: bib60 publication-title: Appl. Phys. Lett. contributor: fullname: Raineri – volume: 102 start-page: 043701 year: 2007 ident: bib33 publication-title: J. Appl. Phys. contributor: fullname: Türüt – volume: 18 start-page: 1931 year: 2009 ident: bib38 publication-title: Chin. Phys. B contributor: fullname: Yong-Ji – volume: 21 start-page: 1656 year: 2006 ident: bib43 publication-title: Semicond. Sci. Technol. contributor: fullname: Balcı – volume: 79 start-page: 3074 year: 2001 end-page: 3076 ident: bib30 publication-title: Appl. Phys. Lett. contributor: fullname: Look – volume: 48 start-page: 330 year: 2010 end-page: 342 ident: bib37 publication-title: Superlattices Microstruct. contributor: fullname: Reddy – volume: 39 start-page: 583 year: 1996 end-page: 592 ident: bib15 publication-title: Solid-State Electron. contributor: fullname: Elabd – volume: 91 start-page: 9841 year: 2002 end-page: 9847 ident: bib29 publication-title: J. Appl. Phys. contributor: fullname: Wright – volume: 12 start-page: 377 year: 2004 ident: 10.1016/j.mssp.2015.04.031_bib17 publication-title: Opto-Electron. Rev. contributor: fullname: Kazukauskas – volume: 268 start-page: 616 year: 2010 ident: 10.1016/j.mssp.2015.04.031_bib22 publication-title: Nucl. Instrum. Methods Phys. Res. B: Beam Interact. Mater. Atoms doi: 10.1016/j.nimb.2009.12.019 contributor: fullname: Çınar – volume: 116 start-page: 083709 year: 2014 ident: 10.1016/j.mssp.2015.04.031_bib36 publication-title: J. Appl. Phys. doi: 10.1063/1.4893970 contributor: fullname: Alialy – volume: 112 start-page: 611 year: 1999 ident: 10.1016/j.mssp.2015.04.031_bib53 publication-title: Solid State Commun. doi: 10.1016/S0038-1098(99)00404-4 contributor: fullname: Zhu – volume: 21 start-page: 298 year: 2006 ident: 10.1016/j.mssp.2015.04.031_bib4 publication-title: Semicond. Sci. Technol. doi: 10.1088/0268-1242/21/3/016 contributor: fullname: Özdemir – volume: 19 start-page: 82 year: 2004 ident: 10.1016/j.mssp.2015.04.031_bib13 publication-title: Semicond. Sci. Technol. doi: 10.1088/0268-1242/19/1/014 contributor: fullname: Subhash – volume: 29 start-page: 633 year: 1986 ident: 10.1016/j.mssp.2015.04.031_bib14 publication-title: Solid State Electron. doi: 10.1016/0038-1101(86)90145-0 contributor: fullname: Song – volume: 102 start-page: 043701 year: 2007 ident: 10.1016/j.mssp.2015.04.031_bib33 publication-title: J. Appl. Phys. doi: 10.1063/1.2769284 contributor: fullname: Aydın – volume: 86 start-page: 88 year: 2009 ident: 10.1016/j.mssp.2015.04.031_bib41 publication-title: Microelectron. Eng. doi: 10.1016/j.mee.2008.09.045 contributor: fullname: Soylu – volume: 546 start-page: 213 year: 2005 ident: 10.1016/j.mssp.2015.04.031_bib18 publication-title: Nucl. Instrum. Methods Phys. Res. A: Accel. Spectrom. Detect. Assoc. Equip. doi: 10.1016/j.nima.2005.03.038 contributor: fullname: Grant – volume: 252 start-page: 358 year: 2005 ident: 10.1016/j.mssp.2015.04.031_bib57 publication-title: Appl. Surf. Sci. doi: 10.1016/j.apsusc.2005.01.009 contributor: fullname: Chand – ident: 10.1016/j.mssp.2015.04.031_bib19 – volume: 32 start-page: 041203 year: 2014 ident: 10.1016/j.mssp.2015.04.031_bib20 publication-title: J. Vac. Sci. amp; Technol. B doi: 10.1116/1.4884756 contributor: fullname: Kumar – volume: 96 start-page: 4313 year: 2004 ident: 10.1016/j.mssp.2015.04.031_bib50 publication-title: J. Appl. Phys. doi: 10.1063/1.1787138 contributor: fullname: Roccaforte – volume: 97 year: 2005 ident: 10.1016/j.mssp.2015.04.031_bib28 publication-title: J. Appl. Phys. doi: 10.1063/1.1928328 contributor: fullname: Roccaforte – volume: 357 start-page: 386 year: 2005 ident: 10.1016/j.mssp.2015.04.031_bib9 publication-title: Phys. B: Condens. Matter doi: 10.1016/j.physb.2004.12.003 contributor: fullname: Karataş – year: 2006 ident: 10.1016/j.mssp.2015.04.031_bib32 contributor: fullname: Sze – volume: 252 start-page: 7749 year: 2006 ident: 10.1016/j.mssp.2015.04.031_bib8 publication-title: Appl. Surf. Sci. doi: 10.1016/j.apsusc.2005.09.046 contributor: fullname: Dökme – volume: 103 start-page: 033520 year: 2013 ident: 10.1016/j.mssp.2015.04.031_bib46 publication-title: Appl. Phys. Lett. doi: 10.1063/1.4816158 contributor: fullname: Huang – volume: 16 start-page: 280 year: 1995 ident: 10.1016/j.mssp.2015.04.031_bib49 publication-title: Electron Device Lett. IEEE doi: 10.1109/55.790735 contributor: fullname: Itoh – volume: 114 start-page: 223704 year: 2013 ident: 10.1016/j.mssp.2015.04.031_bib55 publication-title: J. Appl. Phys. doi: 10.1063/1.4842096 contributor: fullname: Gammon – volume: 85 start-page: 6152 year: 2004 ident: 10.1016/j.mssp.2015.04.031_bib60 publication-title: Appl. Phys. Lett. doi: 10.1063/1.1841476 contributor: fullname: Roccaforte – volume: 48 start-page: 330 year: 2010 ident: 10.1016/j.mssp.2015.04.031_bib37 publication-title: Superlattices Microstruct. doi: 10.1016/j.spmi.2010.06.019 contributor: fullname: Shankar Naik – volume: 185 start-page: 73 year: 2012 ident: 10.1016/j.mssp.2015.04.031_bib59 publication-title: Sens. Actuat. A: Phys. doi: 10.1016/j.sna.2012.07.021 contributor: fullname: Tecimer – volume: 39 start-page: 583 year: 1996 ident: 10.1016/j.mssp.2015.04.031_bib15 publication-title: Solid-State Electron. doi: 10.1016/0038-1101(95)00162-X contributor: fullname: McCafferty – ident: 10.1016/j.mssp.2015.04.031_bib31 – volume: 9 start-page: 269 year: 1974 ident: 10.1016/j.mssp.2015.04.031_bib1 publication-title: IEEE J. Solid-State Circuits doi: 10.1109/JSSC.1974.1050512 contributor: fullname: Van Tuyl – volume: 79 start-page: 3074 year: 2001 ident: 10.1016/j.mssp.2015.04.031_bib30 publication-title: Appl. Phys. Lett. doi: 10.1063/1.1415050 contributor: fullname: Auret – volume: 252 start-page: 2999 year: 2006 ident: 10.1016/j.mssp.2015.04.031_bib54 publication-title: Appl. Surf. Sci. doi: 10.1016/j.apsusc.2005.05.008 contributor: fullname: Zeyrek – volume: 1 start-page: 317 year: 2003 ident: 10.1016/j.mssp.2015.04.031_bib16 publication-title: Power and Energy Syst. Proc. contributor: fullname: Tolbert – volume: 91 start-page: 9841 year: 2002 ident: 10.1016/j.mssp.2015.04.031_bib29 publication-title: J. Appl. Phys. doi: 10.1063/1.1477256 contributor: fullname: Raynaud – volume: 73 start-page: 1315 year: 1993 ident: 10.1016/j.mssp.2015.04.031_bib51 publication-title: J. Appl. Phys. doi: 10.1063/1.353249 contributor: fullname: Werner – volume: 289 start-page: 145 year: 2011 ident: 10.1016/j.mssp.2015.04.031_bib21 publication-title: J. Radioanal. Nucl. Chem. doi: 10.1007/s10967-011-1041-y contributor: fullname: Akbay – volume: 91 start-page: 245 year: 2002 ident: 10.1016/j.mssp.2015.04.031_bib11 publication-title: J. Appl. Phys. doi: 10.1063/1.1424054 contributor: fullname: Gümüş – volume: 29 start-page: 633 year: 1986 ident: 10.1016/j.mssp.2015.04.031_bib56 publication-title: Solid-State Electron. doi: 10.1016/0038-1101(86)90145-0 contributor: fullname: Song – ident: 10.1016/j.mssp.2015.04.031_bib5 – volume: 69 start-page: 1522 year: 1991 ident: 10.1016/j.mssp.2015.04.031_bib12 publication-title: J. Appl. Phys. doi: 10.1063/1.347243 contributor: fullname: Werner – volume: 267 start-page: 87 year: 2009 ident: 10.1016/j.mssp.2015.04.031_bib23 publication-title: Nucl. Instrum. Methods Phys. Res. B: Beam Interact. Mater. Atoms doi: 10.1016/j.nimb.2008.10.087 contributor: fullname: Çınar – year: 2005 ident: 10.1016/j.mssp.2015.04.031_bib45 contributor: fullname: Ciechonski – volume: 38 start-page: 591 year: 2008 ident: 10.1016/j.mssp.2015.04.031_bib7 publication-title: Braz. J. Phys. contributor: fullname: Zeyrek – volume: 506 start-page: 418 year: 2010 ident: 10.1016/j.mssp.2015.04.031_bib42 publication-title: J. Alloy. Compd. doi: 10.1016/j.jallcom.2010.07.019 contributor: fullname: Soylu – volume: 456 start-page: 176 year: 2015 ident: 10.1016/j.mssp.2015.04.031_bib34 publication-title: Phys. B: Condens. Matter doi: 10.1016/j.physb.2014.08.031 contributor: fullname: Ouennoughi – ident: 10.1016/j.mssp.2015.04.031_bib48 doi: 10.1002/div.3709 – volume: 485 start-page: 467 year: 2009 ident: 10.1016/j.mssp.2015.04.031_bib6 publication-title: J. Alloy. Compd. doi: 10.1016/j.jallcom.2009.05.141 contributor: fullname: Janardhanam – volume: 46 start-page: 223 year: 1997 ident: 10.1016/j.mssp.2015.04.031_bib25 publication-title: Mater. Sci. Eng.: B doi: 10.1016/S0921-5107(96)01981-2 contributor: fullname: Marinova – volume: 39 start-page: 915 year: 2003 ident: 10.1016/j.mssp.2015.04.031_bib2 publication-title: IEEE Trans. Ind. Appl. doi: 10.1109/TIA.2003.813730 contributor: fullname: Elasser – volume: 12 start-page: 89 year: 1969 ident: 10.1016/j.mssp.2015.04.031_bib40 publication-title: Solid-State Electron. doi: 10.1016/0038-1101(69)90117-8 contributor: fullname: Crowell – volume: 18 start-page: 1931 year: 2009 ident: 10.1016/j.mssp.2015.04.031_bib38 publication-title: Chin. Phys. B doi: 10.1088/1674-1056/18/5/034 contributor: fullname: Lin – volume: 20 start-page: 171 year: 1977 ident: 10.1016/j.mssp.2015.04.031_bib44 publication-title: Solid-State Electron. doi: 10.1016/0038-1101(77)90180-0 contributor: fullname: Crowell – volume: 21 start-page: 1656 year: 2006 ident: 10.1016/j.mssp.2015.04.031_bib43 publication-title: Semicond. Sci. Technol. doi: 10.1088/0268-1242/21/12/026 contributor: fullname: Coskun – volume: 74 start-page: 4339 year: 1993 ident: 10.1016/j.mssp.2015.04.031_bib26 publication-title: J. Appl. Phys. doi: 10.1063/1.354399 contributor: fullname: Auret – volume: 86 start-page: 303 year: 2009 ident: 10.1016/j.mssp.2015.04.031_bib47 publication-title: Microelectron. Eng. doi: 10.1016/j.mee.2008.10.015 contributor: fullname: Toumi – volume: 44 start-page: 663 year: 2000 ident: 10.1016/j.mssp.2015.04.031_bib10 publication-title: Solid-State Electron. doi: 10.1016/S0038-1101(99)00268-3 contributor: fullname: Zhu – volume: 76 start-page: 394 year: 2014 ident: 10.1016/j.mssp.2015.04.031_bib35 publication-title: Superlattices Microstruct. doi: 10.1016/j.spmi.2014.09.035 contributor: fullname: Gülnahar – volume: 194 start-page: 259 year: 2013 ident: 10.1016/j.mssp.2015.04.031_bib58 publication-title: Sens. Actuat. A: Phys. doi: 10.1016/j.sna.2013.02.018 contributor: fullname: Özavcı – volume: 51 start-page: 1076 year: 1980 ident: 10.1016/j.mssp.2015.04.031_bib27 publication-title: J. Appl. Phys. doi: 10.1063/1.327715 contributor: fullname: Ashok – volume: 45 start-page: 133 year: 2001 ident: 10.1016/j.mssp.2015.04.031_bib52 publication-title: Solid-State Electron. doi: 10.1016/S0038-1101(00)00230-6 contributor: fullname: Hudait – volume: 42 start-page: 242 year: 2008 ident: 10.1016/j.mssp.2015.04.031_bib61 publication-title: Semiconductors doi: 10.1134/S1063782608020231 contributor: fullname: Kozlovskiĭ – volume: 19 start-page: 459 year: 1980 ident: 10.1016/j.mssp.2015.04.031_bib3 publication-title: Jpn J.Appl. Physics contributor: fullname: Takayuki – volume: 40 start-page: 426 year: 1982 ident: 10.1016/j.mssp.2015.04.031_bib39 publication-title: Appl. Phys. Lett. doi: 10.1063/1.93101 contributor: fullname: Hökelek – volume: 209 start-page: 1384 year: 2012 ident: 10.1016/j.mssp.2015.04.031_bib24 publication-title: Phys. Status Solidi (a) doi: 10.1002/pssa.201127559 contributor: fullname: Benkovska |
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| SubjectTerms | High energy electron irradiation Richardson constant Schottky barrier height Silicon carbide |
| Title | The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes |
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