The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes

• Published in: Materials science in semiconductor processing Vol. 39; pp. 112 - 118
• Main Authors: Omotoso, E., Meyer, W.E., Auret, F.D., Paradzah, A.T., Diale, M., Coelho, S.M.M., Janse van Rensburg, P.J.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.11.2015
• Subjects: High energy electron irradiation; Richardson constant; Schottky barrier height; Silicon carbide; Silicon carbide; Richardson constant; Schottky barrier height; High energy electron irradiation
• ISSN: 1369-8001; 1873-4081
• DOI: 10.1016/j.mssp.2015.04.031

The influence of high energy electron (HEE) irradiation from a Sr-90 radio-nuclide on n-type Ni/4H–SiC samples of doping density 7.1×1015cm−3 has been investigated over the temperature range 40–300K. Current–voltage (I–V), capacitance–voltage (C–V) and deep level transient spectroscopy (DLTS) were used to characterize the devices before and after irradiation at a fluence of 6×1014 electrons-cm−2. For both devices, the I–V characteristics were well described by thermionic emission (TE) in the temperature range 120–300K, but deviated from TE theory at temperature below 120K. The current flowing through the interface at a bias of 2.0V from pure thermionic emission to thermionic field emission within the depletion region with the free carrier concentrations of the devices decreased from 7.8×1015 to 6.8×1015 cm−3 after HEE irradiation. The modified Richardson constants were determined from the Gaussian distribution of the barrier height across the contact and found to be 133 and 163Acm−2K−2 for as-deposited and irradiated diodes, respectively. Three new defects with energies 0.22, 0.40 and 0.71eV appeared after HEE irradiation. Richardson constants were significantly less than the theoretical value which was ascribed to a small active device area.