AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10
Improvements of the internal quantum efficiency by reduction of the threading dislocation density and of the light extraction by using UV transparent p-type cladding and contact layers, UV reflecting ohmic contact, and chip encapsulation with optimized shape and refractive index allowed us to obtain...
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| Published in | Applied physics express Vol. 5; no. 8; pp. 082101 - 082101-3 |
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| Main Authors | , , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
The Japan Society of Applied Physics
01.08.2012
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| Online Access | Get full text |
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| Abstract | Improvements of the internal quantum efficiency by reduction of the threading dislocation density and of the light extraction by using UV transparent p-type cladding and contact layers, UV reflecting ohmic contact, and chip encapsulation with optimized shape and refractive index allowed us to obtain the external quantum efficiency of 10.4% at 20 mA CW current with the output power up to 9.3 mW at 278 nm for AlGaN-based deep-ultraviolet light-emitting diodes grown on sapphire substrates. |
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| AbstractList | Improvements of the internal quantum efficiency by reduction of the threading dislocation density and of the light extraction by using UV transparent p-type cladding and contact layers, UV reflecting ohmic contact, and chip encapsulation with optimized shape and refractive index allowed us to obtain the external quantum efficiency of 10.4% at 20 mA CW current with the output power up to 9.3 mW at 278 nm for AlGaN-based deep-ultraviolet light-emitting diodes grown on sapphire substrates. |
| Author | Lunev, Alex Wraback, Michael Dobrinsky, Alex Garrett, Gregory Moe, Craig Gaska, Remis Shur, Michael Shatalov, Max Hu, Xuhong Sun, Wenhong Bilenko, Yuri Yang, Jinwei |
| Author_xml | – sequence: 1 givenname: Max surname: Shatalov fullname: Shatalov, Max organization: Sensor Electronic Technology, Inc., Columbia, SC 29209, U.S.A – sequence: 2 givenname: Wenhong surname: Sun fullname: Sun, Wenhong organization: Sensor Electronic Technology, Inc., Columbia, SC 29209, U.S.A – sequence: 3 givenname: Alex surname: Lunev fullname: Lunev, Alex organization: Sensor Electronic Technology, Inc., Columbia, SC 29209, U.S.A – sequence: 4 givenname: Xuhong surname: Hu fullname: Hu, Xuhong organization: Sensor Electronic Technology, Inc., Columbia, SC 29209, U.S.A – sequence: 5 givenname: Alex surname: Dobrinsky fullname: Dobrinsky, Alex organization: Sensor Electronic Technology, Inc., Columbia, SC 29209, U.S.A – sequence: 6 givenname: Yuri surname: Bilenko fullname: Bilenko, Yuri organization: Sensor Electronic Technology, Inc., Columbia, SC 29209, U.S.A – sequence: 7 givenname: Jinwei surname: Yang fullname: Yang, Jinwei organization: Sensor Electronic Technology, Inc., Columbia, SC 29209, U.S.A – sequence: 8 givenname: Michael surname: Shur fullname: Shur, Michael organization: Department of Electrical, Computer, and Systems Engineering and Center of Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180, U.S.A – sequence: 9 givenname: Remis surname: Gaska fullname: Gaska, Remis organization: Sensor Electronic Technology, Inc., Columbia, SC 29209, U.S.A – sequence: 10 givenname: Craig surname: Moe fullname: Moe, Craig organization: U.S. Army Research Laboratory, Adelphi, MD 20783, U.S.A – sequence: 11 givenname: Gregory surname: Garrett fullname: Garrett, Gregory organization: U.S. Army Research Laboratory, Adelphi, MD 20783, U.S.A – sequence: 12 givenname: Michael surname: Wraback fullname: Wraback, Michael organization: U.S. Army Research Laboratory, Adelphi, MD 20783, U.S.A |
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| Discipline | Physics |
| EISSN | 1882-0786 |
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| Notes | Optical transmission spectra of DUV LED structures with different compositions of p-AlGaN layer. Internal quantum efficiency vs nonequilibrium carrier density. Calculated IQE vs TDD for different values of nonradiative carrier lifetime via point defects. $L$--$I$ characteristics of DUV LEDs packaged with and without encapsulation. Inset shows spectral power distribution at several current levels for encapsulated LED. EQE vs current for DUV LED packaged with and without encapsulation. |
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| References | S. Karpov and N. Makarov: Appl. Phys. Lett. 81 (2002) 4721. R. Gaska, J. Zhang, and M. Shur: U.S. Patent 7,491,626 (2009). Z. Liliental-Weber: private communication. G. A. Garrett, A. V. Sampath, H. Shen, M. Wraback, W. Sun, M. Shatalov, X. Hu, J. Yang, Y. Bilenko, A. Lunev, M. S. Shur, R. Gaska, J. R. Grandusky, and L. J. Schowalter: Phys. Status Solidi C 7 (2010) 2390. Y. Bilenko, R. Gaska, and M. Shur: U.S. Patent 7,928,451 (2008). M. Shatalov, J. Yang, Y. Bilenko, M. Shur, and R. Gaska: CLEO Tech. Dig., 2011, p. JTuD1. Y. Taniyasu, M. Kasu, and T. Makimoto: Nature 441 (2006) 325. M. Shatalov, A. Chitnis, V. Mandavilli, R. Pachipulusu, J. P. Zhang, V. Adivarahan, S. Wu, G. Simin, M. A. Khan, G. Tamulaitis, A. Sereika, I. Yilmaz, M. S. Shur, and R. Gaska: Appl. Phys. Lett. 82 (2003) 167. |
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| Snippet | Improvements of the internal quantum efficiency by reduction of the threading dislocation density and of the light extraction by using UV transparent p-type... |
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| Title | AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10 |
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