AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10

Improvements of the internal quantum efficiency by reduction of the threading dislocation density and of the light extraction by using UV transparent p-type cladding and contact layers, UV reflecting ohmic contact, and chip encapsulation with optimized shape and refractive index allowed us to obtain...

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Bibliographic Details
Published inApplied physics express Vol. 5; no. 8; pp. 082101 - 082101-3
Main Authors Shatalov, Max, Sun, Wenhong, Lunev, Alex, Hu, Xuhong, Dobrinsky, Alex, Bilenko, Yuri, Yang, Jinwei, Shur, Michael, Gaska, Remis, Moe, Craig, Garrett, Gregory, Wraback, Michael
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.08.2012
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Summary:Improvements of the internal quantum efficiency by reduction of the threading dislocation density and of the light extraction by using UV transparent p-type cladding and contact layers, UV reflecting ohmic contact, and chip encapsulation with optimized shape and refractive index allowed us to obtain the external quantum efficiency of 10.4% at 20 mA CW current with the output power up to 9.3 mW at 278 nm for AlGaN-based deep-ultraviolet light-emitting diodes grown on sapphire substrates.
Bibliography:Optical transmission spectra of DUV LED structures with different compositions of p-AlGaN layer. Internal quantum efficiency vs nonequilibrium carrier density. Calculated IQE vs TDD for different values of nonradiative carrier lifetime via point defects. $L$--$I$ characteristics of DUV LEDs packaged with and without encapsulation. Inset shows spectral power distribution at several current levels for encapsulated LED. EQE vs current for DUV LED packaged with and without encapsulation.
ISSN:1882-0778
1882-0786
DOI:10.1143/APEX.5.082101