Decoupling Edge Versus Bulk Conductance in the Trivial Regime of an InAs/GaSb Double Quantum Well Using Corbino Ring Geometry

A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically predicted topological system with a temperature-insensitive linear resistivity per unit length in the range...

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Published inPhysical review letters Vol. 117; no. 7; p. 077701
Main Authors Nguyen, Binh-Minh, Kiselev, Andrey A, Noah, Ramsey, Yi, Wei, Qu, Fanming, Beukman, Arjan J A, de Vries, Folkert K, van Veen, Jasper, Nadj-Perge, Stevan, Kouwenhoven, Leo P, Kjaergaard, Morten, Suominen, Henri J, Nichele, Fabrizio, Marcus, Charles M, Manfra, Michael J, Sokolich, Marko
Format Journal Article
LanguageEnglish
Published United States 12.08.2016
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Abstract A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically predicted topological system with a temperature-insensitive linear resistivity per unit length in the range of 2  kΩ/μm. A resistor network model of the device is developed to decouple the edge conductance from the bulk conductance, providing a quantitative technique to further investigate the nature of this trivial edge conductance, conclusively identified here as being of n type.
AbstractList A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically predicted topological system with a temperature-insensitive linear resistivity per unit length in the range of 2  kΩ/μm. A resistor network model of the device is developed to decouple the edge conductance from the bulk conductance, providing a quantitative technique to further investigate the nature of this trivial edge conductance, conclusively identified here as being of n type.
Author Qu, Fanming
Suominen, Henri J
Nichele, Fabrizio
Manfra, Michael J
Kiselev, Andrey A
Yi, Wei
Nadj-Perge, Stevan
de Vries, Folkert K
van Veen, Jasper
Sokolich, Marko
Kjaergaard, Morten
Marcus, Charles M
Noah, Ramsey
Beukman, Arjan J A
Nguyen, Binh-Minh
Kouwenhoven, Leo P
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  fullname: Kjaergaard, Morten
  organization: Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
– sequence: 12
  givenname: Henri J
  surname: Suominen
  fullname: Suominen, Henri J
  organization: Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
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  givenname: Fabrizio
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  organization: Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
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  organization: Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
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  fullname: Manfra, Michael J
  organization: Department of Physics and Astronomy, and Station Q Purdue, Purdue University, West Lafayette, Indiana 47907, USA
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  givenname: Marko
  surname: Sokolich
  fullname: Sokolich, Marko
  organization: HRL Laboratories, 3011 Malibu Canyon Road, Malibu, California 90265, USA
BackLink https://www.ncbi.nlm.nih.gov/pubmed/27563999$$D View this record in MEDLINE/PubMed
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Snippet A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the...
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Title Decoupling Edge Versus Bulk Conductance in the Trivial Regime of an InAs/GaSb Double Quantum Well Using Corbino Ring Geometry
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